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Número de pieza | MS34P07 | |
Descripción | P-Channel 20-V (D-S) MOSFET | |
Fabricantes | Bruckewell | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MS34P07 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! P-Channel 20-V (D-S) MOSFET
MS34P07
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
Typical Applications:
• Battery Powered Instruments
• Portable Computing
• Mobile Phones
• GPS Units and Media Players
VDS (V)
-20
PRODUCT SUMMARY
rDS(on) (mΩ)
34 @ VGS = -4.5V
48 @ VGS = -2.5V
ID(A)
-5
-3
TSOP6
Drain: 1,2,5,6 Gate: 3
Source: 4
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS -20
Gate-Source Voltage
VGS ±12
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25°C
TA=100°C
TA=25°C
ID
IDM
IS
PD
-5
-3.3
-20
-1
1.40
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units
V
A
A
W
°C
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol Maximum
RθJA
62.5
110
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1
1 page TSOP6
Package Information
MS34P07
Symbol
A
A1
A2
D
E
E1
c
b
e
e1
L
Dimensions In Millimeters
MIN.
MAX.
--- 1.45
--- 0.15
0.9 1.3
2.90 BSC
2.890 BSC
1.5 1.7
0.08
0.25
0.3 0.5
0.95BSC
1.90BSC
0.3 0.6
5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet MS34P07.PDF ] |
Número de pieza | Descripción | Fabricantes |
MS34P07 | P-Channel 20-V (D-S) MOSFET | Bruckewell |
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