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PDF SM3316NSQG Data sheet ( Hoja de datos )
| Número de pieza | SM3316NSQG | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Sinopower | |
| Logotipo |  |
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SM3316NSQG
Features
• 30V/25A,
RDS(ON) =16mΩ(max.) @ VGS =10V
RDS(ON) =21.5mΩ(max.) @ VGS =4.5V
• Avalanche Rated
•
100% UIS + R Tested
g
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
DDDD
SS SG
DFN3x3D-8_EP
(5,6,7,8)
DD DD
Applications
(4) G
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
S SS
( 1, 2, 3 )
N-Channel MOSFET
SM3316NS
SM3316NS QG :
Assembly Material
Handling Code
Temperature Range
Package Code
SM
3316
XXXXX
Package Code
QG : DFN3x3D-8_EP
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.7 - July, 2015
1
www.sinopowersemi.com
1 page  
SM3316NSQG
Typical Operating Characteristics (Cont.)
®
Power Dissipation
25
20
15
10
5
T =25oC
C
0
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Drain Current
30
25
20
15
10
5
T =25oC,V =10V
CG
0
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
100
100µs
10
1ms
1
DC
T =25oC
0.1 C
0.01 0.1 1 10 100
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
3
1
0.1
0.01
Duty = 0.5
0.2
0.1
0.05
0.02
0.01
1E-3
Single Pulse
1E-4
1E-6
1E-5
1E-4
R :5.5oC/W
θJC
1E-3 0.01 0.05
Square Wave Pulse Duration (sec)
Copyright © Sinopower Semiconductor, Inc.
Rev. A.7 - July, 2015
5
www.sinopowersemi.com
5 Page 
SM3316NSQG
Classification Profile
®
Copyright © Sinopower Semiconductor, Inc.
Rev. A.7 - July, 2015
11
www.sinopowersemi.com
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet SM3316NSQG.PDF ] | |
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