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Número de pieza | SK15H45 | |
Descripción | Schottky Barrier Rectifier ( Diode ) | |
Fabricantes | Taiwan Semiconductor | |
Logotipo | ||
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Schottky Barrier Rectifier
FEATURES
- Low forward voltage drop
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- For use as Bypass diode in Solar application.
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
R-6
MECHANICAL DATA
Case: R-6
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Weight: 1.6 g (approximately)
SK15H45
Taiwan Semiconductor
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
SK15H45
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
VRRM
VRMS
VDC
IF(AV)
45
31
45
15
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
340
Maximum instantaneous forward voltage (Note 1)
IF=15A
VF
0.56
Maximum DC reverse current
at rated DC blocking voltage
Typical thermal resistance
@TJ=25 ℃
@TJ=100 ℃
IR
RθJC
RθJA
0.15
20
10
30
Junction temperature range
- in DC forward mode
TJ <=200
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
TSTG
- 55 to +175
UNIT
V
V
V
A
A
V
mA
OC/W
OC
OC
Document Number: DS_D1310004
Version: E13
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet SK15H45.PDF ] |
Número de pieza | Descripción | Fabricantes |
SK15H45 | Schottky Barrier Rectifier ( Diode ) | Taiwan Semiconductor |
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