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PDF CZT2680 Data sheet ( Hoja de datos )
| Número de pieza | CZT2680 | |
| Descripción | SURFACE MOUNT NPN SILICON TRANSISTOR | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CZT2680 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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CZT2680
SURFACE MOUNT
HIGH VOLTAGE
NPN SILICON
SWITCHING POWER TRANSISTOR
SOT-223 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT2680
NPN High Voltage Switching Power Transistor,
manufactured by the epitaxial planar process,
combines both power and high speed switching
characteristics in a SOT-223 Surface Mount Package.
Typical applications include drivers and general high
voltage switching applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
TJ, Tstg
ΘJA
250
200
6.0
1.5
2.0
2.0
-65 to +150
62.5
UNITS
V
V
V
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP
ICBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
Cob
ton
toff
VCB=200V
IC=100µA
250
IC=20mA
200
IE=100µA
6.0
IC=100mA, IB=10mA
IC=500mA, IB=50mA
IC=1.0A, IB=150mA
IC=500mA, IB=50mA
IC=1.0A, IB=150mA
VCE=5.0V, IC=20mA
40
VCE=5.0V, IC=500mA
40
VCE=5.0V, IC=1.0A
15
VCE=20V, IC=100mA, f=1.0MHz
50
VCB=10V, IE=0, f=1.0MHz
IC=500mA, VCC=20V, IB1= IB2=50mA
IC=500mA, VCC=20V, IB1= IB2=50mA
435
275
9.0
45
95
135
0.83
0.95
105
90
47
80
0.3
1.0
MAX
100
150
200
500
1.10
1.20
UNITS
nA
V
V
V
mV
mV
mV
V
V
MHz
30 pF
µs
µs
R3 (1-March 2010)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet CZT2680.PDF ] | |
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