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PDF CXT591E Data sheet ( Hoja de datos )
| Número de pieza | CXT591E | |
| Descripción | SURFACE MOUNT PNP SILICON TRANSISTOR | |
| Fabricantes | Central Semiconductor | |
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CXT591E
SURFACE MOUNT SILICON
PNP TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT591E is a
silicon PNP transistor manufactured by the epitaxial
planar process, epoxy molded in a surface mount
package, designed for high current, general purpose
amplifier applications.
MARKING: FULL PART NUMBER
SOT-89 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
IB
ICM
PD
TJ, Tstg
ΘJA
80
60
5.0
1.0
200
2.0
1.2
-65 to +150
104
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=60V
IEBO
VEB=4.0V
BVCBO
IC=100μA
80
BVCEO
IC=10mA
60
BVEBO
IE=100μA
5.0
VCE(SAT)
IC=500mA, IB=50mA
VCE(SAT)
IC=1.0A, IB=100mA
VBE(SAT)
IC=1.0A, IB=100mA
VBE(ON)
VCE=5.0V, IC=1.0A
hFE VCE=5.0V, IC=1.0mA
200
hFE VCE=5.0V, IC=500mA
200
hFE VCE=5.0V, IC=1.0A
50
hFE VCE=5.0V, IC=2.0A
15
fT
VCE=10V, IC=50mA, f=100MHz
150
Cob VCB=10V, IE=0, f=1.0MHz
MAX
100
100
0.20
0.40
1.1
1.0
600
10
UNITS
V
V
V
A
mA
A
W
°C
°C/W
UNITS
nA
nA
V
V
V
V
V
V
V
MHz
pF
R2 (11-June 2013)
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet CXT591E.PDF ] | |
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