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PDF CMUT5401E Data sheet ( Hoja de datos )
| Número de pieza | CMUT5401E | |
| Descripción | SURFACE MOUNT PNP SILICON TRANSISTOR | |
| Fabricantes | Central Semiconductor | |
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CMUT5401E
ENHANCED SPECIFICATION
SURFACE MOUNT
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMUT5401E is a
PNP Silicon Transistor, packaged in an SOT-523 case,
designed for general purpose amplifier applications
requiring high breakdown voltage and small space
saving packaging.
MARKING CODE: 4C5
SOT-523 CASE
FEATURES:
• High Collector Breakdown Voltage 250V
• Low Leakage Current 50nA Max
APPLICATIONS:
• Low Saturation Voltage 150mV Max @ 50mA
• General purpose switching and amplification • Complementary Device CMUT5551E
• Telephone applications
• SOT-523 Surface Mount Package
MAXIMUM RATINGS: (TA=25°C)
♦ Collector-Base Voltage
♦ Collector-Emitter Voltage
♦ Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
ΘJA
250
220
7.0
600
250
-65 to +150
500
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
ICBO
IEBO
♦ BVCBO
♦ BVCEO
♦ BVEBO
♦ VCE(SAT)
♦ VCE(SAT)
VBE(SAT)
VBE(SAT)
VCB=120V
VCB=120V, TA=100°C
VEB=3.0V
IC=100µA
IC=1.0mA
IE=10µA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
250
220
7.0
♦ Enhanced Specification
MAX
50
50
50
100
150
1.00
1.00
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
μA
nA
V
V
V
mV
mV
V
V
R1 (9-February 2010)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet CMUT5401E.PDF ] | |
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