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PDF STW37N60DM2AG Data sheet ( Hoja de datos )
| Número de pieza | STW37N60DM2AG | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
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STW37N60DM2AG
Automotive-grade N-channel 600 V, 0.094 Ω typ., 28 A
MDmesh™ DM2 Power MOSFET in a TO-247 package
Datasheet - production data
Features
Order code
STW37N60DM2AG
VDS
600 V
RDS(on) max.
0.110 Ω
ID
28 A
PTOT
210 W
3
2
1
TO-247
Figure 1: Internal schematic diagram
Designed for automotive applications and
AEC-Q101 qualified
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STW37N60DM2AG
Table 1: Device summary
Marking
37N60DM2
Package
TO-247
Packing
Tube
August 2015
DocID028243 Rev 1
This is information on a product in full production.
1/12
www.st.com
1 page  
STW37N60DM2AG
Symbol
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Parameter
Table 8: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
Source-drain current
- 28 A
Source-drain current
(pulsed)
- 112 A
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 28 A
ISD = 28 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16:
"Test circuit for inductive load
switching and diode recovery
times")
- 1.6 V
- 120
ns
- 572
nC
- 10.2
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 28 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C (see
Figure 16: "Test circuit for
inductive load switching and
diode recovery times")
- 215
- 1.89
- 17.7
ns
µC
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Symbol
V(BR)GSO
Table 9: Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown
voltage
IGS = ±250 µA, ID = 0 A
Min. Typ. Max. Unit
±30 -
-V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
DocID028243 Rev 1
5/12
5 Page 
STW37N60DM2AG
Revision history
5 Revision history
Date
25-Aug-2015
Table 11: Document revision history
Revision
Changes
1 Initial version
DocID028243 Rev 1
11/12
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