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PDF STW22N95K5 Data sheet ( Hoja de datos )
| Número de pieza | STW22N95K5 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STW22N95K5
Automotive-grade N-channel 950 V, 0.280 Ω typ., 17.5 A
Zener-protected SuperMESH™ 5 Power MOSFET
Datasheet - production data
Features
3
2
1
TO-247
Order code VDS RDS(on)max ID
PTOT
STW22N95K5 950 V 0.330 Ω 17.5 A 250 W
• Designed for automotive applications and
AEC-Q101 qualified
• Worldwide best FOM (figure of merit)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
Figure 1. Internal schematic diagram
D(2)
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using SuperMESH™ 5 technology.
This revolutionary, avalanche-rugged, high
voltage Power MOSFET technology is based on
G(1)
an innovative proprietary vertical structure. The
result is a drastic reduction in on-resistance and
ultra low gate charge for applications which
require superior power density and high
efficiency.
S(3)
AM01476v1
Order code
STW22N95K5
Table 1. Device summary
Marking
Packages
22N95K5
TO-247
Packaging
Tube
March 2014
This is information on a product in full production.
DocID025115 Rev 3
1/14
www.st.com
1 page  
STW22N95K5
Electrical characteristics
Symbol
Table 6. Switching times
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 475 V, ID = 9 A,
RG=4.7 Ω, VGS=10 V
(see Figure 18)
Min. Typ. Max. Unit
- 18 - ns
- 9 - ns
- 65 - ns
- 18 - ns
Symbol
Table 7. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
- 17.5 A
ISDM Source-drain current (pulsed)
(1)
VSD Forward on voltage
ISD= 17.5 A, VGS=0
-
-
70 A
1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
- 513
ISD= 17.5 A, VDD= 60 V
di/dt = 100 A/μs,
- 12
(see Figure 17)
- 46
ns
μC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 17.5 A,VDD= 60 V
di/dt=100 A/μs,
Tj=150 °C(see
Figure 17)
- 670
- 15
- 44
ns
μC
A
1. Pulsed: pulse duration = 300μs, duty cycle 1.5%
Symbol
Table 8. Gate-source Zener diode
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)GSO Gate-source breakdown voltage IGS= ± 1 mA, ID= 0
30 - - V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
DocID025115 Rev 3
5/14
14
5 Page 
STW22N95K5
Package mechanical data
Figure 21. TO-247 drawing
0075325_G
DocID025115 Rev 3
11/14
14
11 Page | ||
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