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PDF STW18N60DM2 Data sheet ( Hoja de datos )
| Número de pieza | STW18N60DM2 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
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STW18N60DM2
N-channel 600 V, 0.26 Ω typ., 12 A MDMesh™ DM2
Power MOSFET in a TO-247 package
Datasheet - production data
3
2
1
TO-247
Figure 1: Internal schematic diagram
D(2)
G(1)
Features
Order code
STW18N60DM2
VDS
600 V
RDS(on) max.
0.295 Ω
ID
12 A
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
S(3)
Order code
STW18N60DM2
AM15572v1_no_tab
Table 1: Device summary
Marking
18N60DM2
Package
TO-247
Packing
Tube
January 2016
DocID027680 Rev 3
This is information on a product in full production.
1/12
www.st.com
1 page  
STW18N60DM2
Symbol
Parameter
Table 8: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD
ISDM(1)
VSD (2)
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 12 A
ISD = 12 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16:
"Test circuit for inductive load
switching and diode recovery
times")
- 12 A
- 48 A
- 1.6 V
- 125
ns
- 0.675
nC
- 11
A
trr Reverse recovery time
ISD = 12 A, di/dt = 100 A/µs,
Qrr
Reverse recovery charge
VDD = 60 V, Tj = 150 °C (see
Figure 16: "Test circuit for
IRRM
Reverse recovery current inductive load switching and
diode recovery times")
- 190
- 1225
- 13
ns
nC
A
Notes:
(1)Pulse width is limited by safe operating area.
(2)Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID027680 Rev 3
5/12
5 Page 
STW18N60DM2
Revision history
5 Revision history
Date
01-Apr-2015
29-Apr-2015
28-Jan-2016
Table 10: Document revision history
Revision
Changes
1 First release.
In Section 2.1 Electrical characteristics (curves):
2 - updated Figure 4: Output characteristics
- updated Figure 5: Transfer characteristics
3 Updated Section 2.1: "Electrical characteristics (curves)"
DocID027680 Rev 3
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet STW18N60DM2.PDF ] | |
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