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PDF STS6P3LLH6 Data sheet ( Hoja de datos )
| Número de pieza | STS6P3LLH6 | |
| Descripción | P-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STS6P3LLH6
P-channel 30 V, 0.024 Ω typ., 6 A, STripFET™ VI DeepGATE™
Power MOSFET in a SO-8 package
Datasheet - preliminary data
Features
1
SO-8
4
Order code
STS6P3LLH6
VDS
30 V
RDS(on) max
0.03 Ω
• RDS(on)* Qg industry benchmark
• Extremely low on-resistance RDS(on)
• High avalanche ruggedness
ID
6A
Applications
• Switching applications
Figure 1. Internal schematic diagram
Description
This device is an N-channel Power MOSFET
developed using the 6th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest RDS(on) in all packages.
Order code
STS6P3LLH6
Table 1. Device summary
Marking
Packages
6K3L
SO-8
Packaging
Tape and reel
Note:
For the P-channel MOSFET actual polarity of voltages and current has to be reversed.
November 2013
DocID024219 Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/15
www.st.com
1 page  
STS6P3LLH6
Electrical characteristics
Note:
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min.
ISD Source-drain current
ISDM (1)
Source-drain current
(pulsed)
VSD (2) Forward on voltage
ISD = 3A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 3 A, di/dt = 100 A/µs
VDD=16 V, Tj =150 °C
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
-
-
-
-
-
-
Typ.
15
6.5
0.9
Max.
6
Unit
A
24 A
1.1 V
ns
nC
A
For the P-channel MOSFET actual polarity of voltages and current has to be reversed
DocID024219 Rev 2
5/15
15
5 Page 
STS6P3LLH6
Package mechanical data
Figure 16. SO-8 drawing
Figure 17. SO-8 recommended footprint(a)
0016023_G_FU
a. All dimensions are in millimeters.
DocID024219 Rev 2
Footprint_0016023_G_FU
11/15
15
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