|
|
PDF STL38N65M5 Data sheet ( Hoja de datos )
| Número de pieza | STL38N65M5 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de STL38N65M5 (archivo pdf) en la parte inferior de esta página. Total 17 Páginas | ||
|
No Preview Available !
STL38N65M5
Features
N-channel 650 V, 0.090 Ω typ., 22.5 A MDmesh™ V
Power MOSFET in a PowerFLAT™ 8x8 HV package
Datasheet — preliminary data
Order code
STL38N65M5
VDS @
TJmax
710 V
RDS(on)
max
0.105 Ω
ID
(1)
22.5 A
1. The value is rated according to Rthj-case and limited by
package.
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
This device is an N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
6
6
6
*
%RWWRPĆYLHZ
'
3RZHU)/$7Ć[Ć+9
Figure 1. Internal schematic diagram
'
*
6
$0YB[
Table 1. Device summary
Order code
STL38N65M5
Marking
38N65M5
Package
PowerFLAT™ 8x8 HV
Packaging
Tape and reel
January 2013
Doc ID 023239 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/17
www.st.com
17
1 page  
STL38N65M5
Electrical characteristics
Table 6.
Symbol
Switching times
Parameter
td(V)
tr(V)
tf(i)
tc(off)
Voltage delay time
Voltage rise time
Crossing fall time
Crossing time
Test conditions
VDD = 400 V, ID = 20 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 20)
Min. Typ. Max. Unit
66 ns
9 ns
--
9 ns
13 ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
(1)
ISD Source-drain current
(1)(2)
ISDM
Source-drain current (pulsed)
(3)
VSD Forward on voltage
ISD = 22.5 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 22.5 A, di/dt = 100 A/μs
VDD = 100 V (see Figure 17)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 22.5 A, di/dt = 100 A/μs
VDD = 100 V, Tj = 150 °C
(see Figure 17)
-
-
-
-
22.5 A
90 A
1.5 V
354 ns
6 μC
34 A
428 ns
8 μC
38 A
1. The value is rated according to Rthj-case.and limited by package
2. Pulse width limited by safe operating area
3. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Doc ID 023239 Rev 1
5/17
5 Page 
STL38N65M5
Package mechanical data
Table 8. PowerFLAT™ 8x8 HV mechanical data
Dim.
Min.
mm
Typ.
A 0.80 0.90
A1 0.00 0.02
b 0.95 1.00
D 8.00
E 8.00
D2 7.05 7.20
E2 4.15 4.30
e 2.00
L 0.40 0.50
aaa 0.10
bbb 0.10
ccc 0.10
Max.
1.00
0.05
1.05
7.30
4.40
0.60
Doc ID 023239 Rev 1
11/17
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet STL38N65M5.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STL38N65M5 | N-channel Power MOSFET | STMicroelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |