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PDF STL23NS3LLH7 Data sheet ( Hoja de datos )
| Número de pieza | STL23NS3LLH7 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STL23NS3LLH7
N-channel 30 V, 0.0027 Ω typ., 23 A STripFET™ H7 Power
MOSFET plus monolithic Schottky in a PowerFLAT™ 3.3 x 3.3
Datasheet - production data
Figure 1: Internal schematic diagram
D(5, 6, 7, 8)
G(4)
Features
Order code
STL23NS3LLH7
VDS
30 V
RDS(on) max
0.0037 Ω
ID
23 A
Very low on-resistance
Very low Qg
High avalanche ruggedness
Embedded Schottky diode
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes the
STripFET H7 technology with a trench gate
structure combined with extremely low on-
resistance. The device also offers ultra-low
capacitances for higher switching frequency
operations.
S(1, 2, 3)
Order code
STL23NS3LLH7
Table 1: Device summary
Marking
Package
23NS3
PowerFLATTM 3.3 x 3.3
Packing
Tape and reel
May 2015
DocID025074 Rev 3
This is information on a product in full production.
1/14
www.st.com
1 page  
STL23NS3LLH7
Symbol
VSD(1)
trr
Qrr
IRRM
Table 7: Source drain diode
Parameter
Test conditions
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 2 A, VGS = 0
ISD = 2 A,
di/dt = 100 A/µs
VGS = 0 V
Notes:
(1)Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
Electrical characteristics
Min.
-
-
-
-
Typ.
0.4
31.2
18.7
1.2
Max.
0.7
Unit
V
ns
nC
A
DocID025074 Rev 3
5/14
5 Page 
STL23NS3LLH7
Dim.
A
b
c
D
D1
D2
e
E
E1
E2
H
K
L
L1
L2
θ
Package information
Table 8: PowerFLAT™ 3.3 x 3.3 mechanical data
mm
Min.
Typ.
Max.
0.70 0.80 0.90
0.25 0.30 0.39
0.14 0.15 0.20
3.10 3.30 3.50
3.05 3.15 3.25
2.15 2.25 2.35
0.55 0.65 0.75
3.10 3.30 3.50
2.90 3.00 3.10
1.60 1.70 1.80
0.25 0.40 0.55
0.65 0.75 0.85
0.30 0.45 0.60
0.05 0.15 0.25
0.15
8° 10° 12°
DocID025074 Rev 3
11/14
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| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet STL23NS3LLH7.PDF ] | |
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