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PDF STL220N3LLH7 Data sheet ( Hoja de datos )
| Número de pieza | STL220N3LLH7 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STL220N3LLH7
N-channel 30 V, 0.00081 Ω typ., 50 A STripFET™ VII DeepGATE™
Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
Features
1
2
3
4
PowerFLAT™5x6
Figure 1. Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
Order code
STL220N3LLH7
VDS
30 V
RDS(on) max
0.0011 Ω
ID
50 A
• Very low on-resistance
• Very low Qg
• High avalanche ruggedness
Applications
• Switching applications
Description
This device exhibits low on-state resistance and
capacitance for improved conduction and
switching performance.
G(4)
S(1, 2, 3)
12 34
Top View
AM15540v2
Order code
STL220N3LLH7
Table 1. Device summary
Marking
Package
220N3LL7
PowerFLATTM 5x6
Packaging
Tape and reel
May 2014
This is information on a product in full production.
DocID024732 Rev 4
1/15
www.st.com
15
1 page  
STL220N3LLH7
Electrical characteristics
Symbol
Table 7. Source drain diode
Parameter
Test conditions
ISD
(1)
ISDM
(2)
VSD
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 50 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ID = 50 A, di/dt = 100 A/μs
VDD = 24 V
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Min. Typ. Max. Unit
- 50 A
- 200 A
- 1V
- 66
ns
- 101
nC
- 3.1
A
DocID024732 Rev 4
5/15
5 Page 
STL220N3LLH7
Package mechanical data
Dim.
A
A1
A2
b
D
E
D2
E2
e
e1
L
K
Table 8. PowerFLAT™ 5x6 type S-C mechanical data
mm
Min. Typ. Max.
0.80 1.00
0.02 0.05
0.25
0.30 0.50
5.20
6.15
4.11 4.31
3.50 3.70
1.27
0.65
0.715
1.015
1.05 1.35
Figure 20. PowerFLAT™ 5x6 recommended footprint (dimensions in mm)
DocID024732 Rev 4
Footprint
11/15
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet STL220N3LLH7.PDF ] | |
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