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PDF STL120N8F7 Data sheet ( Hoja de datos )
| Número de pieza | STL120N8F7 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STL120N8F7
N-channel 80 V, 3.7 mΩ typ., 120 A STripFET™ F7
Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
Figure 1: Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
Features
Order code VDS RDS(on) max.
ID
PTOT
STL120N8F7 80 V 4.4 mΩ 120 A 140 W
Among the lowest RDS(on) on the market
Excellent figure of merit (FoM)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
S(1, 2, 3)
12 34
Top View
Order code
STL120N8F7
Table 1: Device summary
Marking
Package
120N8F7
PowerFLAT™ 5x6
Packing
Tape and reel
July 2015
DocID027246 Rev 2
This is information on a product in full production.
1/14
www.st.com
1 page  
STL120N8F7
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
DocID027246 Rev 2
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STL120N8F7
4.2 PowerFLAT™ 5x6 packing information
Package information
Figure 21: PowerFLAT™ 5x6 tape (dimensions are in mm)
Figure 22: PowerFLAT™ 5x6 package orientation in carrier tape
DocID027246 Rev 2
11/14
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet STL120N8F7.PDF ] | |
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