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Número de pieza | MA3DF47 | |
Descripción | Fast Recovery Diodes | |
Fabricantes | Panasonic | |
Logotipo | ||
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Fast Recovery Diodes (FRD)
MA3DF47
Silicon mesa type
For high frequency rectification
For plasma display panel drive
Features
Super high speed switching characteristic (trr = 13 ns typ.)
Soft recovery
Package
Code
TO-220D-A1
Pin Name
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Repetitive peak reverse voltage
VRRM
Rating
370
Unit
V
1: Anode
2: Cathode
3: Anode
Non-repetitive peak reverse surge voltage *1
Forward current (Average) *2
VRSM
IF(AV)
460
20
V
A
Marking Symbol: MA3DF47
Repetitive peak forward current *3
Non-repetitive peak forward surge current *4
IFRM
IFSM
150
100
A
A
Internal Connection
Junction temperature
Tj 150 °C
Storage temperature
Tstg –40 to +150 °C
123
Note) *1: 60 Hz half-sine wave. (If repeative, RMS voltage < 370 V)
*2: TC = 25°C
*3: Pulse width < 10 ms. Peak value of the sine wave. (If repeative, RMS current < 20 A)
*4: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
VF IF = 20 A
1.65 1.85
V
Reverse current
Reverse recovery time *
IRRM
trr *1
trr *2
VRRM = 370 V
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
IF = 40 A, di/dt = –200 A/ms, Irr = IR × 0.5 A
10
13 20
25 30
mA
ns
Thermal resistance (j-c)
Rth(j-c)
3.0 °C/W
Thermal resistance (j-a)
Rth(j-a)
63 °C/W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 10 MHz
3. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
4. *1: R-loadtrr measurement circuit
50 Ω
50 Ω
trr
*2: L-loadtrr measurement circuit
D.U.T.
5.5 Ω
IF 0.25 × IR
IR
230 µH
D.U.T.
Publication date: May 2009
SKJ00028AED
1
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet MA3DF47.PDF ] |
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