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PDF MBRS30H45CT Data sheet ( Hoja de datos )
| Número de pieza | MBRS30H45CT | |
| Descripción | Dual Common Cathode Schottky Rectifier | |
| Fabricantes | Taiwan Semiconductor | |
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MBRS30H45CT
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency
- Ideal for automated placement
- Guardring for overvoltage protection
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-263AB (D2PAK)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 1.41 g (approximately)
TO-263AB (D2PAK)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
MBRS30H45CT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
45
31
Maximum DC blocking voltage
VDC 45
Maximum average forward rectified current
IF(AV)
30
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
220
Maximum instantaneous forward voltage at (Note 1)
IF = 15A, TJ=25℃
IF = 15A, TJ=125℃
IF = 30A, TJ=25℃
IF = 30A, TJ=125℃
Maximum reverse current @ rated VR TJ=25 ℃
TJ=125 ℃
Voltage rate of change (Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
VF
IR
dV/dt
RθJC
RθJA
TJ
TSTG
0.70
0.60
0.90
0.75
0.2
15
10000
1.5
50
- 55 to +175
- 55 to +175
Unit
V
V
V
A
A
V
mA
V/μs
OC/W
OC
OC
Document Number: D1308004
Version: G13
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MBRS30H45CT.PDF ] | |
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