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PDF MBRS2545CT Data sheet ( Hoja de datos )
| Número de pieza | MBRS2545CT | |
| Descripción | Dual Common Cathode Schottky Rectifier | |
| Fabricantes | Taiwan Semiconductor | |
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MBRS2535CT thru MBRS25150CT
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency
- Ideal for automated placement
- Guardring for overvoltage protection
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-263AB (D2PAK)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 1.37 g (approximately)
TO-263AB (D2PAK)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
MBRS MBRS MBRS MBRS MBRS MBRS MBRS
PARAMETER
SYMBOL 2535 2545 2550 2560 2590 25100 25150
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
VRRM
VRMS
VDC
IF(AV)
CT CT CT CT CT CT CT
35 45 50 60 90 100 150
24 31 35 42 63 70 105
35 45 50 60 90 100 150
25
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
IFRM
25
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
200
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
IF=12.5A @ 25℃
IF=12.5A @ 125℃
IF=25.0A @ 25℃
IF=25.0A @ 125℃
Maximum reverse current @ rated VR TJ=25 ℃
TJ=125 ℃
Voltage rate of change (Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
IRRM
VF
IR
dV/dt
RθJC
TJ
TSTG
1
0.65
0.55
0.82
0.73
0.2
15
0.5
0.75
0.65
0.90
0.80
0.2
10
10000
1.0
- 55 to +150
- 55 to +150
0.85
0.75
0.92
0.88
0.1
7.5
0.95
0.92
1.02
0.98
0.1
5
Unit
V
V
V
A
A
A
A
V
mA
V/μs
OC/W
OC
OC
Document Number: D1308001
Version: J13
1 page  
CREAT BY ART
MBRS2535CT thru MBRS25150CT
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: D1308001
Version: J13
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet MBRS2545CT.PDF ] | |
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