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PDF MJ21196G Data sheet ( Hoja de datos )
| Número de pieza | MJ21196G | |
| Descripción | Silicon Power Transistors | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MJ21195G - PNP
MJ21196G - NPN
Silicon Power Transistors
The MJ21195G and MJ21196G utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
• Total Harmonic Distortion Characterized
• High DC Current Gain
• Excellent Gain Linearity
• High SOA
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector−Emitter Voltage − 1.5V
Collector Current − Continuous
Collector Current − Peak (Note 1)
Base Current − Continuous
Total Device Dissipation @ TC = 25_C
Derate above 25_C
VCEO
VCBO
VEBO
VCEX
IC
ICM
IB
PD
250 Vdc
400 Vdc
5 Vdc
400 Vdc
16 Adc
30 Adc
5 Adc
250 W
1.43 W/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to +200 _C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Symbol
RqJC
Max Unit
0.7 _C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
16 AMPERES
COMPLEMENTARY SILICON-
POWER TRANSISTORS
250 VOLTS, 250 WATTS
SCHEMATIC
PNP
CASE 3
NPN
CASE 3
1
BASE
EMITTER 2
1
BASE
EMITTER 2
3
12
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
MJ2119xG
AYWW
MEX
MJ2119x = Device Code
x = 5 or 6
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
MEX
= Country of Origin
ORDERING INFORMATION
Device
Package
Shipping
MJ21195G
TO−204
(Pb−Free)
100 Units / Tray
MJ21196G
TO−204
(Pb−Free)
100 Units / Tray
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 6
1
Publication Order Number:
MJ21195/D
1 page  
MJ21195G − PNP MJ21196G − NPN
10000
10000
Cib
Cib
1000 1000
Cob
TJ = 25°C
ftest = 1 MHz
100
0.1
1.0
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 14. MJ21195 Typical Capacitance
100
TJ = 25°C
ftest = 1 MHz
100
0.1
1.0
Cob
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. MJ21196 Typical Capacitance
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10
100 1000 10000
FREQUENCY (Hz)
100000
Figure 16. Typical Total Harmonic Distortion
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
ANALYZER
SOURCE
AMPLIFIER
50 W
+50 V
DUT
0.5 W
0.5 W
DUT
8.0 W
-50 V
Figure 17. Total Harmonic Distortion Test Circuit
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MJ21196G.PDF ] | |
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