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Número de pieza | AUIRLZ24NL | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
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No Preview Available ! AUTOMOTIVE GRADE
AUIRLZ24NS
AUIRLZ24NL
Features
l Advanced Process Technology
l Logic Level Gate Drive
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an ex-
tremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
G
HEXFET® Power MOSFET
D
VDSS
55V
RDS(on) max.
0.06Ω
S ID
18A
DD
GS
D2Pak
AUILZ24NS
S
D
G
TO-262
AUIRLZ24NL
Base Part Number
AUIRLZ24NS
Package Type
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRLZ24NS
AUIRLZ24NSTRL
AUIRLZ24NL
TO-262
Tube
50
AUIRLZ24NL
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is
not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is
25°C, unless otherwise specified.
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Parameter
gContinuous Drain Current, VGS @ 10V
gContinuous Drain Current, VGS @ 10V
cgPulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Max.
18
13
72
3.8
45
0.30
Units
A
W
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
dgSingle Pulse Avalanche Energy
cAvalanche Current
cRepetitive Avalanche Energy
egPeak Diode Recovery
± 16
68
11
4.5
5.0
V
mJ
A
mJ
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
-55 to + 175
300
°C
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient (PCB Mounted, steady-state)**
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Typ.
–––
–––
Max.
3.3
40
Units
°C/W
1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback
February 23, 2015
1 page AUIRLZ24NS/AUIRLZ24NL
20
16
12
8
4
0A
25 50 75 100 125 150 175
TC, Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
VDS
VGS
RG
RD
D.U.T.
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V+- DD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
0.1
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
0.0001
PDM
Notes:
1. Duty factor D = t1 / t 2
t1
t2
2. Peak TJ = PDMx Z thJC + TC
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
A
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback
February 23, 2015
5 Page AUIRLZ24NS/AUIRLZ24NL
Qualification Information†
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
Moisture Sensitivity Level
Machine Model
3L-D2 PAK
3L-TO-262
ESD
Human Body Model
Charged Device Model
RoHS Compliant
MSL1
Class M2(+/- 150V )††
(per AEC-Q101-002)
Class H1A(+/- 500V )††
(per AEC-Q101-001)
Class C5(+/- 2000V )††
(per AEC-Q101-005)
Yes
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Highest passing voltage
11 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback
February 23, 2015
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet AUIRLZ24NL.PDF ] |
Número de pieza | Descripción | Fabricantes |
AUIRLZ24NL | Power MOSFET ( Transistor ) | International Rectifier |
AUIRLZ24NS | Power MOSFET ( Transistor ) | International Rectifier |
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