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PDF STFI260N6F6 Data sheet ( Hoja de datos )

Número de pieza STFI260N6F6
Descripción N-CHANNEL POWER MOSFET
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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STFI260N6F6
N-channel 60 V, 0.0024 Ω, 80 A STripFET™ VI DeepGATE™
Power MOSFET in I²PAKFP package
Datasheet — preliminary data
Features
Order codes
STFI260N6F6
VDSS
60 V
RDS(on) max
< 0.003 Ω
ID
80 A
Fully insulated and low profile package with
increased creepage path from pin to heatsink
plate
Low gate charge
Very low on-resistance
High avalanche ruggedness
Application
Switching applications
Description
This device is an N-channel Power MOSFET
developed using the 6th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest RDS(on) in all packages.
12 3
I²PAKFP
(TO-281)
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order codes
Marking
STFI260N6F6
260N6F6
Package
I²PAK
(TO-281)
Packaging
Tube
April 2012
Doc ID 023096 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/12
www.st.com
12

1 page




STFI260N6F6 pdf
STFI260N6F6
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 120 A, VGS = 0
ISD = 120 A, VDD = 48 V
di/dt = 100 A/µs,
Tj = 150 °C
(see Figure 15)
-
-
-
-
120 A
480 A
1.1 V
55.6 ns
116 nC
3.8 A
1. Current limited by package.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 023096 Rev 1
5/12

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STFI260N6F6 arduino
STFI260N6F6
5 Revision history
Table 9. Document revision history
Date
Revision
13-Apr-2012
1 First release.
Revision history
Changes
Doc ID 023096 Rev 1
11/12

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