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Número de pieza | STF28N60DM2 | |
Descripción | N-CHANNEL POWER MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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No Preview Available ! STF28N60DM2
N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2
Power MOSFET in a TO-220FP package
Datasheet - production data
Features
Order code
STF28N60DM2
VDS @
TJmax.
650 V
RDS(on)
max.
0.16 Ω
ID PTOT
21 A 30 W
3
2
1
TO-220FP
Figure 1: Internal schematic diagram
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Order code
STF28N60DM2
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Table 1: Device summary
Marking
28N60DM2
Package
TO-220FP
Packing
Tube
October 2015
DocID026863 Rev 2
This is information on a product in full production.
1/12
www.st.com
1 page STF28N60DM2
Symbol
ISD(1)
ISDM(2)
VSD(3)
trr
Qrr
IRRM
trr
Qrr
IRRM
Parameter
Table 8: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
Source-drain current
- 21 A
Source-drain current
(pulsed)
- 84 A
Forward on voltage
Reverse recovery time
Reverse recovery
charge
Reverse recovery
current
VGS = 0 V, ISD = 21 A
ISD = 21 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16:
"Test circuit for inductive load
switching and diode recovery
times")
- 1.6 V
- 140
ns
- 0.5
µC
- 7.4
A
Reverse recovery time
Reverse recovery
charge
Reverse recovery
current
ISD = 21 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C (see
Figure 16: "Test circuit for
inductive load switching and
diode recovery times")
- 309
- 2.6
- 16.8
ns
µC
A
Notes:
(1) Limited by maximum junction temperature.
(2) Pulse width is limited by safe operating area.
(3) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Symbol
V(BR)GSO
Table 9: Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown voltage IGS = ±250 µA, ID = 0 A
Min. Typ. Max. Unit
±30 -
-V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
DocID026863 Rev 2
5/12
5 Page STF28N60DM2
Revision history
5 Revision history
Date
04-Sep-2014
09-Oct-2015
Revision
1
2
Table 11: Document revision history
Changes
First release.
Text and formatting changes throughout document
On cover page:
- upated title and Features table
In section Electrical ratings:
- updated all table data
In section Electrical characteristics:
- updated all table data
- renamed table Static (was On /off states)
- added table Gate-source Zener diode
Added section Electrical characteristics (curves)
Updated and renamed section Package mechanical data (was
Package information)
Datasheet promoted from preliminary to production data
DocID026863 Rev 2
11/12
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet STF28N60DM2.PDF ] |
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