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PDF STF10N80K5 Data sheet ( Hoja de datos )
| Número de pieza | STF10N80K5 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STF10N80K5
N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5
Power MOSFET in a TO-220FP package
Datasheet - production data
Features
Order code VDS
STF10N80K5 800 V
RDS(on) max
0.600 Ω
ID PTOT
9 A 30 W
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
D(2)
G(1)
S(3)
AM01476v1
• Industry’s best RDS(on)
• Industry’s best figure of merit (FoM)
• Ultra-low gate charge
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This very high voltage N-channel Power MOSFET
is designed using MDmesh™ K5 technology
based on an innovative proprietary vertical
structure. The result is a dramatic reduction in on-
resistance and ultra-low gate charge for
applications requiring superior power density and
high efficiency.
Order code
STF10N80K5
Table 1. Device summary
Marking
Package
10N80K5
TO-220FP
Packaging
Tube
November 2014
This is information on a product in full production.
DocID026564 Rev 4
1/14
www.st.com
1 page  
STF10N80K5
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
- 14.5 -
VDD = 400 V, ID = 4.5 A,
RG= 4.7 Ω, VGS =10 V
-
11
-
(see Figure 18)
- 35 -
- 14 -
ns
ns
ns
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD Source-drain current
ISDM
VSD(1)
Source-drain current (pulsed)
Forward on voltage
ISD= 9 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 9 A, VDD= 60 V
di/dt = 100 A/µs,
(see Figure 17)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 9 A,VDD= 60 V
di/dt=100 A/µs,
Tj=150 °C
(see Figure 17)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
- 9A
- 36 A
- 1.5 V
- 370
ns
- 4.58
µC
- 25
A
- 520
ns
- 5.88
µC
- 22.5
A
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max Unit
V(BR)GSO Gate-source breakdown voltage IGS= ± 1mA, ID= 0
30 - - V
The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD
capability of the device. The Zener voltage is appropriate for efficient and cost-effective
intervention to protect the device integrity. These integrated Zener diodes thus eliminate the
need for external components.
DocID026564 Rev 4
5/14
14
5 Page 
STF10N80K5
Package mechanical data
Figure 19. TO-220FP drawing
DocID026564 Rev 4
7012510_Rev_K_B
11/14
14
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