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PDF STB9NK80Z Data sheet ( Hoja de datos )
| Número de pieza | STB9NK80Z | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
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STB9NK80Z
Automotive-grade N-channel 800 V, 1.5 Ω typ., 5.2 A
2
Zener-protected SuperMESH™ Power MOSFETs in D PAK package
Datasheet - production data
Features
TAB
3
1
D2PAK
Figure 1. Internal schematic diagram
' 7$%
*
6
AM01476v1
Type
STB9NK80Z
VDS
(@Tjmax)
800V
RDS(on)
max.
1.8Ω
ID
5.2A
• Designed for automotive applications and
AEC-Q101 qualified
• Extremely high dv/dt capability
• 100% avalanche tested
• Gate charge minimized
• Zener-protected
• Very low intrinsic capacitances
Applications
• Switching application
Description
This device is an N-channel Zener-protected
Power MOSFET developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
Order codes
STB9NK80Z
Table 1. Device summary
Marking
Package
B9NK80Z
D²PAK
July 2013
This is information on a product in full production.
DocID024491 Rev 2
Packaging
Tape and reel
1/15
www.st.com
15
1 page  
STB9NK80Z
Electrical characteristics
Symbol
Table 7. Source drain diode
Parameter
Test conditions
ISD
(1)
ISDM
(2)
VSD
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr Reverse recovery time
Qrr Reverse recovery charge
IRRM Reverse recovery current
ISD = 5.2 A, VGS = 0
ISD = 5.2 A, di/dt = 100
A/μs
VDD = 50 V, Tj = 150°C
(see Figure 20)
1. Pulsed: pulse duration=300μs, duty cycle 1.5%
2. Pulse width limited by safe operating area
Min. Typ. Max. Unit
5.2 A
-
20.8 A
- 1.6 V
- 530
ns
- 3.31
μC
- 12.5
A
Symbol
Table 8. Gate-source zener diode
Parameter
Test conditions
Min. Typ. Max. Unit
ID= 0
V(BR) GSO Gate-source breakdown voltage
IGS= ± 1mA
30
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
DocID024491 Rev 2
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5 Page 
STB9NK80Z
Package mechanical data
Figure 21. D²PAK (TO-263) drawing
Figure 22. D²PAK footprint(a)
16.90
0079457_T
12.20
1.60
5.08
9.75
3.50
a. All dimension are in millimeters
DocID024491 Rev 2
Footprint
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