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PDF STB46N30M5 Data sheet ( Hoja de datos )
| Número de pieza | STB46N30M5 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STB46N30M5
Automotive-grade N-channel 300 V, 53 A, 0.037 Ω typ.,
MDmesh™ V Power MOSFET in a D2PAK package
Datasheet - production data
Features
TAB
3
1
D2PAK
Figure 1. Internal schematic diagram
' 7$%
*
6
$0Y
Order code
STB46N30M5
VDS
300 V
RDS(on) max.
0.04 Ω
ID
53 A
• Designed for automotive applications and
AEC-Q101 qualified
• Amongst the best RDS(on) * area
• High dv/dt capability
• Excellent switching performance
• Easy to drive
• 100% avalanche tested
Applications
• Switching applications
Description
This device is an N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Order code
STB46N30M5
Table 1. Device summary
Marking
Packages
46N30M5
D2PAK
Packaging
Tape and reel
April 2014
This is information on a product in full production.
DocID026126 Rev 2
1/17
www.st.com
1 page  
STB46N30M5
Electrical characteristics
Symbol
Parameter
td(v)
tr(v)
tf(i)
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Table 7. Switching times
Test conditions
VDD = 240 V, ID = 32 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15)
Min. Typ. Max Unit
- 66 - ns
- 15 - ns
- 24 - ns
- 22.5 - ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
- 53 A
ISDM (1) Source-drain current (pulsed)
- 212 A
VSD (2) Forward on voltage
ISD = 53 A, VGS = 0
-
1.5 V
trr Reverse recovery time
- 223
Qrr Reverse recovery charge
ISD = 48 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 20)
-
2.5
IRRM Reverse recovery current
- 23
ns
μC
A
trr Reverse recovery time
ISD = 48 A, di/dt = 100 A/µs - 280
Qrr Reverse recovery charge
VDD = 60 V, Tj = 150 °C
- 3.9
IRRM Reverse recovery current
(see Figure 20)
- 28
ns
μC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID026126 Rev 2
5/17
17
5 Page 
STB46N30M5
Package mechanical data
Figure 21. D²PAK (TO-263) drawing
0079457_T
DocID026126 Rev 2
11/17
17
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet STB46N30M5.PDF ] | |
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