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PDF STH170N8F7-2 Data sheet ( Hoja de datos )
| Número de pieza | STH170N8F7-2 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
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STH170N8F7-2
N-channel 80 V, 0.0028 Ω typ., 120 A, STripFET™ F7
Power MOSFET in a H²PAK-2 package
Datasheet — production data
TAB
2
3
1
H2PAK-2
Features
Order code VDS RDS(on) max. ID PTOT
STH170N8F7-2 80 V 0.0037 Ω 120 A 250 W
• Among the lowest RDS(on) on the market
• Excellent figure of merit (FoM)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness
Figure 1. Internal schematic diagram
' 7$%
*
Applications
• Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
6
+3$.
Order code
STH170N8F7-2
Table 1. Device summary
Marking
Package
170N8F7
H2PAK-2
Packaging
Tape and reel
February 2015
This is information on a product in full production.
DocID026382 Rev 2
1/15
www.st.com
1 page  
STH170N8F7-2
Electrical characteristics
Table 8. Source-drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 120 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 120 A,
di/dt = 100 A/µs,
VDD= 64 V, Tj=150 °C
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%.
Min. Typ. Max. Unit
- 120 A
- 480 A
- 1.2 V
- 54
ns
- 78
nC
- 2.9
A
DocID026382 Rev 2
5/15
15
5 Page 
STH170N8F7-2
Package information
Figure 20. H²PAK-2 recommended footprint (dimensions are in mm)
8159712_D
DocID026382 Rev 2
11/15
15
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| PDF Descargar | [ Datasheet STH170N8F7-2.PDF ] | |
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