|
|
PDF STGP10M65DF2 Data sheet ( Hoja de datos )
| Número de pieza | STGP10M65DF2 | |
| Descripción | Trench gate field-stop IGBT | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de STGP10M65DF2 (archivo pdf) en la parte inferior de esta página. Total 18 Páginas | ||
|
No Preview Available !
STGP10M65DF2
Trench gate field-stop IGBT, M series 650 V, 10 A low loss
Datasheet - production data
Figure 1: Internal schematic diagram
Features
6 µs of short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 10 A
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Applications
Motor control
UPS
PFC
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series of
IGBTs, which represents an optimum
compromise in performance to maximize the
efficiency of inverter systems where low loss and
short-circuit capability are essential. Furthermore,
a positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Order code
STGP10M65DF2
Table 1: Device summary
Marking
G10M65DF2
Package
TO-220
Packing
Tube
October 2015
DocID027352 Rev 4
This is information on a product in full production.
1/18
www.st.com
1 page  
STGP10M65DF2
Symbol Parameter
tf
Current fall
time
Eon(1)
Turn-on
switching
losses
Eoff(2)
Turn-off
switching
losses
Ets
Total switching
losses
td(on)
Turn-on delay
time
tr
Current rise
time
(di/dt)on
Turn-on
current slope
td(off)
Turn-off-delay
time
tf
Current fall
time
Turn-on
Eon switching
losses
Turn-off
Eoff switching
losses
Ets
Total switching
losses
tsc
Short-circuit
withstand time
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
- 92 - ns
- 0.12 - mJ
- 0.27 - mJ
VCE = 400 V, IC = 10 A, VGE = 15 V,
RG = 22 Ω TJ = 175 °C (see Figure 29: "
Test circuit for inductive load switching" )
- 0.39 - mJ
- 18 - ns
- 9 - ns
- 890 - A/µs
- 90 - ns
- 170 -
ns
- 0.26 - mJ
- 0.4 - mJ
VCC ≤ 400 V, VGE = 15 V, TJstart = 150 °C
- 0.66 -
6-
mJ
µs
Notes:
(1)Energy losses include reverse recovery of the diode.
(2)Turn-off losses also include the tail of the collector current.
Symbol
trr
Qrr
Irrm
dIrr/dt
Table 7: Diode switching characteristics (inductive load)
Parameter
Test conditions
Min. Typ.
Reverse recovery
time
- 96
Reverse recovery
charge
Reverse recovery
current
Peak rate of fall of
reverse recovery
current during tb
IF = 10 A, VR = 400 V, VGE = 15 V
(see Figure 29: " Test circuit for
inductive load switching")
di/dt = 1000 A/µs
- 373
- 13
- 661
Max.
Unit
ns
nC
A
A/µs
DocID027352 Rev 4
5/18
5 Page 
STGP10M65DF2
Electrical characteristics
Figure 26: Reverse recovery energy vs. diode current slope
Figure 27: Thermal impedance for IGBT
K
δ=0.5
ZthTO2T_B
0.2
0.1
10-1
0.01
0.05
0.02
Zth=k Rthj-c
δ=tp/t
Single pulse
10-2
10-5
10-4
10-3
tp
t
10-2
10-1
tp(s)
DocID027352 Rev 4
11/18
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet STGP10M65DF2.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STGP10M65DF2 | Trench gate field-stop IGBT | STMicroelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |