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PDF STGF15M65DF2 Data sheet ( Hoja de datos )
| Número de pieza | STGF15M65DF2 | |
| Descripción | Trench gate field-stop IGBT | |
| Fabricantes | STMicroelectronics | |
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STGF15M65DF2
Trench gate field-stop IGBT M series, 650 V 15 A low loss
Datasheet - preliminary data
TO-220FP
Figure 1: Internal schematic diagram
Features
6 µs of short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 15 A
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Applications
Motor control
UPS
PFC
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series of
IGBTs, which represents an optimum
compromise in performance to maximize the
efficiency of inverter systems where low loss and
short-circuit capability are essential. Furthermore,
a positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Order code
STGF15M65DF2
Table 1: Device summary
Marking
G15M65DF2
Package
TO-220FP
Packing
Tube
October 2015
DocID028488 Rev 1
This is preliminary information on a new product now in development
or undergoing evaluation. Details are subject to change without notice.
1/15
www.st.com
1 page  
STGF15M65DF2
Symbol
Electrical characteristics
Table 6: IGBT switching characteristics (inductive load)
Parameter
Test conditions
Min. Typ. Max. Unit
td(on) Turn-on delay time
24 - ns
tr Current rise time
7.8 - ns
(di/dt)on
td(off)
tf
Eon(1)
Turn-on current slope
Turn-off-delay time
Current fall time
Turn-on switching losses
VCE = 400 V, IC = 15 A,
VGE = 15 V, RG = 12 Ω
(see Figure 29: " Test circuit
for inductive load switching" )
1570 - A/µs
93 - ns
106 -
ns
0.09 - mJ
Eoff(2) Turn-off switching losses
0.45 - mJ
Ets Total switching losses
0.54 - mJ
td(on) Turn-on delay time
24.8 -
ns
tr Current rise time
9.2 - ns
(di/dt)on
td(off)
tf
Eon
Turn-on current slope
Turn-off-delay time
Current fall time
Turn-on switching losses
VCE = 400 V, IC = 15 A,
VGE = 15 V, RG = 12 Ω
TJ = 175 °C (see Figure 29: "
Test circuit for inductive load
switching" )
1300 - A/µs
96 - ns
169 -
ns
0.22 - mJ
Eoff Turn-off switching losses
0.61 - mJ
Ets Total switching losses
tsc
Short-circuit withstand time
VCC ≤ 400 V, VGE = 15 V,
TJstart = 150 °C
0.83
6
-
-
mJ
µs
Notes:
(1)Energy losses include reverse recovery of the diode.
(2)Turn-off losses also include the tail of the collector current.
Table 7: Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
trr Reverse recovery time
- 142 -
ns
Qrr Reverse recovery charge
IF = 15 A, VR = 400 V,
- 525 - nC
Irrm Reverse recovery current
VGE = 15 V (see Figure 29: "
- 13.4 -
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
Test circuit for inductive load
switching") di/dt = 1000 A/µs
-
790
- A/µs
Err Reverse recovery energy
- 64 - µJ
trr Reverse recovery time
- 241 -
ns
Qrr Reverse recovery charge
IF = 15 A, VR = 400 V,
- 1690 - nC
Irrm Reverse recovery current
VGE = 15 V TJ = 175 °C
(see Figure 29: " Test circuit
-
20
-
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
for inductive load switching")
di/dt = 1000 A/µs
-
420
- A/µs
Err Reverse recovery energy
- 176 -
µJ
DocID028488 Rev 1
5/15
5 Page 
STGF15M65DF2
3 Test circuits
Figure 29: Test circuit for inductive load
switching
AA
C
G
L=100 µF
EB
B
C
G D.U.T
3.3
µF
+ RG
E
-
1000
µF
VCC
AM01504v 1
Test circuits
Figure 30: Gate charge test circuit
VCC
12 V
47 kΩ
100 nF
1 kΩ
Vi
≤
V
GMAX
2200
µF
PW 1 kΩ
IG=CONST
2.7 kΩ
47 kΩ
100 Ω
D.U.T.
VG
AM01505v1
Figure 31: Switching waveform
Figure 32: Diode reverse recovery waveform
di/dt
IF
IRRM
trr
ts
tf
Qrr
I
RRM
10%
t
VRRM
dv/dt
AM01507v1
DocID028488 Rev 1
11/15
11 Page | ||
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