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PDF STGB10M65DF2 Data sheet ( Hoja de datos )
| Número de pieza | STGB10M65DF2 | |
| Descripción | Trench gate field-stop IGBT | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STGB10M65DF2
Trench gate field-stop IGBT, M series 650 V, 10 A low loss
Datasheet - production data
TAB
3
1
D2PAK
Figure 1: Internal schematic diagram
Features
6 µs of short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 10 A
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
Applications
Motor control
UPS
PFC
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series of
IGBTs, which represents an optimum
compromise in performance to maximize the
efficiency of inverter systems where low loss and
short-circuit capability are essential. Furthermore,
a positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
Order code
STGB10M65DF2
Table 1: Device summary
Marking
Package
G10M65DF2
D²PAK
Packing
Tape and reel
October 2015
DocID027429 Rev 5
This is information on a product in full production.
1/20
www.st.com
1 page  
STGB10M65DF2
Symbol
tf
Eon(1)
Eoff(2)
Ets
td(on)
tr
(di/dt)on
td(off)
tf
Eon
Eoff
Ets
tsc
Parameter
Current fall
time
Turn-on
switching
losses
Turn-off
switching
losses
Total
switching
losses
Turn-on delay
time
Current rise
time
Turn-on
current slope
Turn-off-delay
time
Current fall
time
Turn-on
switching
losses
Turn-off
switching
losses
Total
switching
losses
Short-circuit
withstand time
Test conditions
VCE = 400 V, IC = 10 A, VGE = 15 V,
RG = 22 Ω TJ = 175 °C (see Figure 29: "
Test circuit for inductive load switching" )
VCC ≤ 400 V, VGE = 15 V, TJstart = 150 °C
Electrical characteristics
Min. Typ. Max. Unit
- 92 - ns
- 0.12 - mJ
- 0.27 - mJ
- 0.39 - mJ
- 18 - ns
- 9 - ns
- 890 - A/µs
- 90 - ns
- 170 -
ns
- 0.26 - mJ
- 0.4 - mJ
- 0.66 - mJ
6 - µs
Notes:
(1)Energy losses include reverse recovery of the diode.
(2)Turn-off losses also include the tail of the collector current.
Symbol
trr
Qrr
Irrm
dIrr/dt
Table 7: Diode switching characteristics (inductive load)
Parameter
Test conditions
Min. Typ.
Reverse recovery
time
- 96
Reverse recovery
charge
Reverse recovery
current
Peak rate of fall of
reverse recovery
current during tb
IF = 10 A, VR = 400 V, VGE = 15 V
(see Figure 29: " Test circuit for
inductive load switching")
di/dt = 1000 A/µs
- 373
- 13
- 661
Max.
Unit
ns
nC
A
A/µs
DocID027429 Rev 5
5/20
5 Page 
STGB10M65DF2
Electrical characteristics
Figure 26: Reverse recovery energy vs. diode current slope
Figure 27: Thermal impedance for IGBT
K
δ=0.5
ZthTO2T_B
0.2
0.1
10-1
0.01
0.05
0.02
Zth=k Rthj-c
δ=tp/t
Single pulse
10-2
10-5
10-4
10-3
tp
t
10-2
10-1
tp(s)
DocID027429 Rev 5
11/20
11 Page | ||
| Páginas | Total 20 Páginas | |
| PDF Descargar | [ Datasheet STGB10M65DF2.PDF ] | |
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