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PDF STFU28N65M2 Data sheet ( Hoja de datos )
| Número de pieza | STFU28N65M2 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STFU28N65M2
N-channel 650 V, 0.15 Ω typ., 20 A MDmesh™ M2
Power MOSFET in a TO-220FP ultra narrow leads package
Datasheet - production data
3
2
1
TO-220FP
ultra narrow leads
Figure 1: Internal schematic diagram
D(2)
G(1)
Features
Order code
STFU28N65M2
VDS
650 V
RDS(on) max
0.18 Ω
ID
20 A
Extremely low gate charge
Excellent output capacitance (Coss) profile
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
S(3)
Order code
STFU28N65M2
AM15572v1_no_tab
Table 1: Device summary
Marking
Package
28N65M2
TO-220FP
ultra narrow leads
Packaging
Tube
November 2015
DocID027607 Rev 3
This is information on a product in full production.
1/12
www.st.com
1 page  
STFU28N65M2
Symbol
Parameter
Table 8: Source drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD Source-drain current
- 20 A
ISDM(1) Source-drain current (pulsed)
- 80 A
VSD(2) Forward on voltage
ISD = 20 A, VGS = 0 V
-
1.6 V
trr Reverse recovery time
Qrr Reverse recovery charge
IRRM Reverse recovery current
ISD = 20 A, di/dt = 100 A/µs, - 384
VDD = 60 V ( see Figure 16: - 5.7
"Test circuit for inductive
load switching and diode
recovery times" )
- 30
ns
µC
A
trr Reverse recovery time
Qrr Reverse recovery charge
IRRM Reverse recovery current
ISD = 20 A, di/dt = 100 A/µs, - 544
VDD = 60 V, Tj = 150 °C,
- 8.2
(see Figure 16: "Test circuit
for inductive load switching
- 30.5
and diode recovery times" )
ns
µC
A
Notes:
(1)Pulse width limited by safe operating area.
(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
DocID027607 Rev 3
5/12
5 Page 
STFU28N65M2
Revision history
5 Revision history
Date
09-Mar-2015
07-Oct-2015
12-Nov-2015
Revision
1
2
3
Table 10: Document revision history
Changes
Initial release
Document status promoted from preliminary to production data.
Updated Figure 1: "Internal schematic diagram" in cover page.
Updated Table 3: "Thermal data".
Minor text changes.
DocID027607 Rev 3
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet STFU28N65M2.PDF ] | |
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