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PDF STFI10NK60Z Data sheet ( Hoja de datos )
| Número de pieza | STFI10NK60Z | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
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STFI10NK60Z
N-channel 600 V, 0.65 Ω, 10 A, Zener-protected SuperMESH™
Power MOSFET in I²PAKFP package
Datasheet — production data
Features
Type
STFI10NK60Z
VDSS
600 V
RDS(on)
max
ID
< 0.75 Ω 10 A
PTOT
35 W
■ Fully insulated and low profile package with
increased creepage path from pin to heatsink
plate
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
1
2
3
I²PAKFP
(TO-281)
Applications
■ Switching applications
Description
This device is an N-channel Zener-protected
Power MOSFET developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well-
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
Figure 1. Internal schematic diagram
D(2)
G(1)
S(3)
AM01476v1
Table 1. Device summary
Order code
Marking
STFI10NK60Z
10NK60Z
Package
I2PAKFP
(TO-281)
Packaging
Tube
March 2012
This is information on a product in full production.
Doc ID 018968 Rev 3
1/13
www.st.com
13
1 page  
STFI10NK60Z
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD=10 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=8 A, di/dt = 100 A/µs,
VDD=40 V, Tj=150 °C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
10 A
-
36 A
- 1.6 V
570
- 4.3
15
ns
µC
A
Table 9. Gate-source Zener diode
Symbol
Parameter
Test conditions
V(BR)GSO
Gate-source breakdown
voltage (ID=0)
IGS= ± 1 mA
Min. Typ. Max. Unit
30 - V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID 018968 Rev 3
5/13
5 Page 
STFI10NK60Z
Table 10. I2PAKFP (TO-281) mechanical data
Dim.
Min.
mm
Typ.
A 4.40
B 2.50
D 2.50
D1 0.65
E 0.45
F 0.75
F1
G 4.95
H 10.00
L1 21.00
L2 13.20
L3 10.55
L4 2.70
-
L5 0.85
L6 7.30
Figure 21. I2PAKFP (TO-281) drawing
Package mechanical data
Max.
4.60
2.70
2.75
0.85
0.70
1.00
1.20
5.20
10.40
23.00
14.10
10.85
3.20
1.25
7.50
Doc ID 018968 Rev 3
REV!
11/13
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet STFI10NK60Z.PDF ] | |
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