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PDF STFI9N80K5 Data sheet ( Hoja de datos )
| Número de pieza | STFI9N80K5 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STF9N80K5,
STFI9N80K5
N-channel 800 V, 0.73 Ω typ., 7 A MDmesh™ K5
Power MOSFETs in TO-220FP and I²PAKFP packages
Datasheet - production data
Features
Order code
STF9N80K5
STFI9N80K5
VDS
800 V
RDS(on) max.
0.90 Ω
ID
7A
TO-220FP
I2PAKFP (TO-281)
Figure 1: Internal schematic diagram
D(2)
Industry’s lowest RDS(on) x area
Industry’s best figure of merit (FoM)
Ultra-low gate charge
100% avalanche tested
Zener-protected
Applications
Switching applications
G(1) Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
S(3)
AM15572v1_no_tab
density and high efficiency.
Order code
Table 1: Device summary
Marking
Package
Packing
STF9N80K5
STFI9N80K5
9N80K5
TO-220FP
I²PAKFP(TO-281)
Tube
November 2015
DocID028359 Rev 2
This is information on a product in full production.
1/16
www.st.com
1 page  
STF9N80K5, STFI9N80K5
Symbol Parameter
Table 8: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD Source-drain current
- 7A
ISDM(1) Source-drain current (pulsed)
- 28 A
VSD(2) Forward on voltage
ISD = 7 A, VGS = 0 V - 1.5 V
Trr Reverse recovery time
Qrr Reverrse recovery charge
IRRM Reverse recovery current
ISD = 7 A, di/dt = 100 A/µs,
VDD = 60 V
See Figure 17: "Test circuit
for inductive load switching
and diode recovery times"
- 292
- 2.66
- 18.2
ns
µC
A
Trr Reverse recovery time
Qrr Reverse recovery charge
IRRM Reverse recovery current
ISD = 7 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
See Figure 17: "Test circuit
for inductive load switching
and diode recovery times"
- 477
- 3.91
- 16.4
ns
µC
A
Notes:
(1)Pulse width limited by safe operating area
(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
V(BR)GSO
Table 9: Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown voltage IGS= ± 1mA, ID= 0 A
Min. Typ. Max. Unit
30 -
-V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection,thus eliminating the need for additional external componentry.
DocID028359 Rev 2
5/16
5 Page 
STF9N80K5, STFI9N80K5
4.1 TO-220FP package information
Figure 21: TO-220FP package outline
Package information
DocID028359 Rev 2
11/16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet STFI9N80K5.PDF ] | |
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