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Número de pieza | STD85N10F7AG | |
Descripción | N-CHANNEL POWER MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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No Preview Available ! STD85N10F7AG
Automotive-grade N-channel 100 V, 0.0085 Ω typ., 70 A
STripFET™ F7 Power MOSFET in a DPAK package
Datasheet - production data
TAB
3
1
DPAK
Features
Order code
VDS
RDS(on)
max
STD85N10F7AG 100 V 0.010 Ω
ID
70 A
PTOT
85 W
• Designed for automotive applications and
AEC-Q101 qualified
• Among the lowest RDS(on) on the market
• Excellent figure of merit (FoM)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness
Figure 1. Internal schematic diagram
Applications
• Switching applications
'7$%
*
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
6
$0Y
Order code
STD85N10F7AG
Table 1. Device summary
Marking
Package
85N10F7
DPAK
Packing
Tape and reel
May 2015
This is information on a product in full production.
DocID027030 Rev 2
1/16
www.st.com
1 page STD85N10F7AG
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
- 70 A
ISDM (1) Source-drain current (pulsed)
- 280 A
VSD (2) Forward on voltage
ISD = 70 A, VGS = 0
-
1.1 V
trr Reverse recovery time
ISD = 70 A, di/dt = 100 A/µs
-
70
Qrr Reverse recovery charge
VDD = 80 V, Tj=150 °C
- 125
IRRM Reverse recovery current
(see Figure 18)
- 3.6
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID027030 Rev 2
5/16
16
5 Page STD85N10F7AG
Dim.
A
A1
A2
b
b4
c
c2
D
D1
E
E1
e
e1
H
L
L1
L2
L4
R
V2
Package information
Table 8. DPAK (TO-252) type A2 mechanical data
mm
Min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
4.95
6.40
5.10
2.16
4.40
9.35
1.00
2.60
0.65
0.60
0°
Typ.
5.10
5.20
2.28
2.80
0.80
0.20
Max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
5.25
6.60
5.30
2.40
4.60
10.10
1.50
3.00
0.95
1.00
8°
DocID027030 Rev 2
11/16
16
11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet STD85N10F7AG.PDF ] |
Número de pieza | Descripción | Fabricantes |
STD85N10F7AG | N-CHANNEL POWER MOSFET | STMicroelectronics |
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