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PDF KTC4666 Data sheet ( Hoja de datos )
| Número de pieza | KTC4666 | |
| Descripción | EPITAXIAL PLANAR NPN TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
KTC4666
EPITAXIAL PLANAR NPN TRANSISTOR
LOW NOISE AMPLIFIER APPLICATION.
FEATURE
High hFE : hFE=600 3600.
Noise Figure : 0.5dB(Typ.) at f=100kHz.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
60
50
8
150
30
200
150
-55 150
* Package mounted on 99.5% alumina 10mm 8mm 0.6mm
UNIT
V
V
V
mA
mA
mW
E
MBM
DIM MILLIMETERS
DA
2.00+_ 0.20
2 B 1.25+_ 0.15
13
C 0.90+_ 0.10
D 0.3+0.10/-0.05
E 2.10 +_ 0.20
G 0.65
P H 0.15+0.1/-0.06
J 1.30
K 0.00~0.10
L
HM
0.70
0.42 +_0.10
NK
N
N 0.10 MIN
P 0.1 MAX
1. EMITTER
2. BASE
3. COLLECTOR
USM
Marking
hFE Rank
Type Name
T
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
ICBO
IEBO
hFE (1)(Note)
VCB=50V, IE=0
VEB=8V, IC=0
VCE=6V, IC=2mA
DC Current Gain
hFE (2)
VCE=5V, IC=1mA
Collector-Emitter Saturation Voltage
Transition Frequency
hFE (3)
VCE(sat)(1)
VCE(sat)(2)
VCE(sat(3)
fT
VCE=10V, IC=2mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=100mA, IB=10mA
VCE=10V, IC=10mA
Collector Output Capacitance
Noise Figure
Cob
NF (1)
NF (2)
VCB=10V, IE=0, f=1MHz
VCE=6V, IC=0.1mA,
f=100kHz, Rg=10k
VCE=6V, IC=0.1mA,
f=1kHz, Rg=10k
Note : hFE Classification A:600 1800 , B:1200 3600
2008. 8. 29
Revision No : 4
MIN.
-
-
600
500
600
-
-
-
100
-
-
-
TYP.
-
-
-
-
-
0.05
0.07
0.12
250
3.5
0.5
0.3
MAX.
0.1
0.1
3600
3600
-
0.15
0.2
0.25
-
-
-
-
UNIT
A
A
V
V
V
MHz
pF
dB
1/3
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