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PDF CMLM0205 Data sheet ( Hoja de datos )
| Número de pieza | CMLM0205 | |
| Descripción | Multi Discrete Module | |
| Fabricantes | Central Semiconductor | |
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CMLM0205
Multi Discrete Module™
SURFACE MOUNT SILICON
N-CHANNEL MOSFET AND
LOW VF SCHOTTKY DIODE
SOT-563 CASE
MAXIMUM RATINGS - CASE: (TA=25°C)
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLM0205 is a
Multi Discrete Module™ consisting of a single
N-Channel MOSFET and a low VF Schottky diode
packaged in a space saving SOT-563 case. This
device is designed for small signal general purpose
applications where size and operational efficiency are
prime requirements.
• Combination: N-Channel MOSFET and
Low VF Schottky Diode.
MARKING CODE: C25
SYMBOL
PD
TJ, Tstg
ΘJA
350
-65 to +150
357
UNITS
mW
°C
°C/W
MAXIMUM RATINGS - Q1: (TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Maximum Pulsed Source Current
SYMBOL
VDS
VDG
VGS
ID
IS
IDM
ISM
60
60
40
280
280
1.5
1.5
MAXIMUM RATINGS - D1: (TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current, tp≤1.0ms
Peak Forward Surge Current, tp = 8.0ms
SYMBOL
VRRM
IF
IFRM
IFSM
40
500
3.5
10
ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
IGSSF, IGSSR
IDSS
IDSS
ID(ON)
BVDSS
VGS(th)
VDS(ON)
VDS(ON)
VSD
rDS(ON)
rDS(ON)
VGS=20V, VDS=0
VDS=60V, VGS=0
VDS=60V, VGS=0, TJ=125°C
VGS=10V, VDS=10V
VGS=0, ID=10μA
VDS=VGS, ID=250μA
VGS=10V, ID=500mA
VGS=5.0V, ID=50mA
VGS=0, IS=400mA
VGS=10V, ID=500mA
VGS=10V, ID=500mA, TJ=125°C
500
60
1.0
100
1.0
500
2.5
1.0
0.15
1.2
2.0
3.5
UNITS
V
V
V
mA
mA
A
A
UNITS
V
mA
A
A
UNITS
nA
μA
μA
mA
V
V
V
V
V
Ω
Ω
R3 (15-June 2015)
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet CMLM0205.PDF ] | |
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