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PDF STB23N80K5 Data sheet ( Hoja de datos )
| Número de pieza | STB23N80K5 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STB23N80K5
N-channel 800 V, 0.23 Ω typ., 16 A MDmesh™ K5
Power MOSFET in a D²PAK package
Datasheet - production data
TAB
3
1
D2PAK
Figure 1: Internal schematic diagram
Features
Order code
VDS RDS(on) max. ID
PTOT
STB23N80K5 800 V
0.28 Ω
16 A 190 W
Industry’s lowest RDS(on) x area
Industry’s best figure of merit (FoM)
Ultra low gate charge
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Order code
STB23N80K5
Table 1: Device summary
Marking
Package
23N80K5
D²PAK
Packing
Tape and reel
August 2015
DocID028291 Rev 1
This is information on a product in full production.
1/15
www.st.com
1 page  
STB23N80K5
Symbol
Parameter
Table 8: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 16 A
ISD = 16 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 15:
"Test circuit for inductive load
switching and diode recovery
times")
- 16 A
- 64 A
- 1.5 V
- 410
ns
-7
µC
- 34
A
trr Reverse recovery time
ISD = 16 A, di/dt = 100 A/µs,
Qrr
Reverse recovery charge
VDD = 60 V, Tj = 150 °C (see
Figure 15: "Test circuit for
IRRM
Reverse recovery current inductive load switching and
diode recovery times")
- 650
- 10
- 32
ns
µC
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Symbol
V(BR)GSO
Table 9: Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown voltage IGS = ±1 mA, ID = 0 A
Min. Typ. Max. Unit
±30 -
-V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection, thus eliminating the need for additional external componentry.
DocID028291 Rev 1
5/15
5 Page 
STB23N80K5
Package information
Figure 20: D²PAK (TO-263) recommended footprint (dimensions are in mm)
DocID028291 Rev 1
11/15
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet STB23N80K5.PDF ] | |
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