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PDF STH400N4F6-6 Data sheet ( Hoja de datos )
| Número de pieza | STH400N4F6-6 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STH400N4F6-2,
STH400N4F6-6
Automotive-grade N-channel 40 V, 0.85 mΩ typ.,180 A
STripFET™ VI DeepGATE™ Power MOSFETs
Datasheet - production data
Features
TAB
2
3
1
H2PAK-2
TAB
7
1
H2PAK-6
Order codes
VDS
RDS(on) max ID
STH400N4F6-2
STH400N4F6-6
40 V
1.15 mΩ 180 A
• Designed for automotive applications and
AEC-Q101 qualified
• Low gate charge
• Very low on-resistance
• High avalanche ruggedness
Figure 1. Internal schematic diagram
D(TAB)
D(TAB)
Applications
• Switching applications
Description
G(1)
S(2, 3)
H2PAK-2
G(1)
S(2, 3, 4, 5, 6, 7)
H2PAK-6
AM14551V1
These devices are N-channel Power MOSFETs
th
developed using the 6 generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFETs exhibits
the lowest RDS(on) in all packages.
Order codes
STH400N4F6-2
STH400N4F6-6
Table 1. Device summary
Marking
Package
400N4F6
2
H PAK-2
2
H PAK-6
Packaging
Tape and reel
February 2014
This is information on a product in full production.
DocID023429 Rev 2
1/18
www.st.com
1 page  
STH400N4F6-2, STH400N4F6-6
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
(1)
ISD
(1)
ISDM
(2)
VSD
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 180 A, VGS = 0
ISD = 180 A, VDD = 32 V
di/dt = 100 A/μs,
Tj = 25 °C
-
-
-
-
-
-
180
720
1.3
58
392
3.2
A
A
V
ns
nC
A
1. Limited by package, current allowed by silicon 360 A
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
DocID023429 Rev 2
5/18
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5 Page 
STH400N4F6-2, STH400N4F6-6
Package mechanical data
Figure 14. H²PAK-2 recommended footprint (dimensions in mm)
8159712_C
DocID023429 Rev 2
11/18
18
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet STH400N4F6-6.PDF ] | |
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