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PDF STH360N4F6-2 Data sheet ( Hoja de datos )
| Número de pieza | STH360N4F6-2 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
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STH360N4F6-2
Features
N-channel 40 V, 180 A STripFET™ VI DeepGATE™
Power MOSFET in H²PAK-2 package
Datasheet − preliminary data
Order code
STH360N4F6-2
VDSS
40 V
RDS(on) max
ID
< 1.25 mΩ 180 A(1)
1. Current limited by package
■ Low gate charge
■ Very low on-resistance
■ High avalanche ruggedness
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using the 6th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest RDS(on) in all packages.
TAB
2
3
1
H2PAK-2
Figure 1. Internal schematic diagram
$ 4!"
'
Table 1. Device summary
Order code
STH360N4F6-2
Marking
360N4F6
3
!-V
Package
H2PAK-2
Packaging
Tape and reel
August 2012
Doc ID 023422 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/12
www.st.com
12
1 page  
STH260N6F6-2
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD(1)
ISDM(1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 180 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 120 A, VDD = 32 V
di/dt = 100 A/µs,
Tj = 150 °C
1. Current limited by package
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
-
180
720
1.1
TBD
A
A
V
ns
nC
A
Doc ID 023422 Rev 1
5/12
5 Page 
STH260N6F6-2
5 Revision history
Table 10. Document revision history
Date
Revision
08-Aug-2012
1 First release.
Revision history
Changes
Doc ID 023422 Rev 1
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet STH360N4F6-2.PDF ] | |
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