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PDF STH245N75F3-6 Data sheet ( Hoja de datos )
| Número de pieza | STH245N75F3-6 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STH245N75F3-6
Automotive-grade N-channel 75 V, 2.6 mΩ typ., 180 A
STripFET™ F3 Power MOSFET in a H²PAK-6 package
Datasheet - production data
Features
TAB
1
H2PAK-6
7
Figure 1. Internal schematic diagram
Order code
STH245N75F3-6
VDS
75 V
RDS(on) max. ID
3.0 mΩ 180 A
• Designed for automotive applications and
AEC-Q101 qualified
• Conduction losses reduced
• Low profile, very low parasitic inductance
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using STripFET™ F3 technology. It is
designed to minimize on-resistance and gate
charge to provide superior switching
performance.
Order code
STH245N75F3-6
Table 1. Device summary
Marking
Packages
245N75F3
H2PAK-6
Packaging
Tape and reel
July 2014
This is information on a product in full production.
DocID026268 Rev 2
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www.st.com
1 page  
STH245N75F3-6
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
- 180 A
ISD (1) Source-drain current (pulsed)
- 720 A
VSD (2) Forward on voltage
VGS = 0, ISD = 120 A
-
1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 120 A,di/dt = 100 A/µs -
80
VDD = 30 V, Tj = 150 °C
- 180
(see Figure 15)
- 4.5
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
DocID026268 Rev 2
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STH245N75F3-6
Dim.
A
A1
C
e
e1
e2
E
F
H
H1
L
L1
L2
L3
L4
M
R
V
Package mechanical data
Table 8. H²PAK-6 mechanical data
mm
Min.
4.30
0.03
1.17
2.34
4.88
7.42
0.45
0.50
10.00
7.40
14.75
1.27
4.35
6.85
1.5
1.90
0.20
0°
Typ.
-
Max.
4.80
0.20
1.37
2.74
5.28
7.82
0.60
0.70
10.40
7.80
15.25
1.40
4.95
7.25
1.75
2.50
0.60
8°
DocID026268 Rev 2
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| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet STH245N75F3-6.PDF ] | |
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