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PDF STY100NM60N Data sheet ( Hoja de datos )
| Número de pieza | STY100NM60N | |
| Descripción | N-CHANNEL Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STY100NM60N
Features
N-channel 600 V, 0.028 Ω typ., 98 A MDmesh™ II
Power MOSFET in a Max247 package
Datasheet — production data
Type
STY100NM60N
VDSS
@ TJmax
650 V
RDS(on) max
< 0.029 Ω
ID
98 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
3
2
1
Max247
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order code
STY100NM60N
Marking
100NM60N
Package
Max247
Packaging
Tube
November 2012
This is information on a product in full production.
Doc ID 022225 Rev 2
1/13
www.st.com
13
1 page  
STY100NM60N
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
ISDM (1) Source-drain current (pulsed)
98 A
-
392 A
VSD (2) Forward on voltage
ISD = 98 A, VGS = 0
-
1.6 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 98 A, di/dt = 100 A/µs
VDD = 60 V
(see Figure 16)
622
- 16.5
52.5
ns
µC
A
trr Reverse recovery time
ISD = 98 A, di/dt = 100 A/µs
820
Qrr Reverse recovery charge
VDD = 60 V, Tj = 150 °C
- 27
IRRM Reverse recovery current
(see Figure 16)
66
ns
µC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 022225 Rev 2
5/13
5 Page 
STY100NM60N
Figure 20. Max247 drawing
Package mechanical data
Doc ID 022225 Rev 2
0094330_Rev_D
11/13
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet STY100NM60N.PDF ] | |
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