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PDF STFI24NM60N Data sheet ( Hoja de datos )
| Número de pieza | STFI24NM60N | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STFI24NM60N
N-channel 600 V, 0.168 Ω typ., 17 A MDmesh™ II Power MOSFET
in a I²PAKFP package
Datasheet − production data
Features
1 23
I2PAKFP
(TO-281)
Figure 1. Internal schematic diagram
Order codes VDS @Tjmax RDS(on) max. ID
STFI24NM60N 650 V
0.19 Ω
17 A
• Fully insulated and low profile package with
increased creepage path from pin to heatsink
plate
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Applications
• Switching applications
'
*
6
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
$0Y
Order code
STFI24NM60N
Table 1. Device summary
Marking
Packages
24NM60N
I2PAKFP (TO-281)
Packaging
Tube
July 2014
This is information on a product in full production.
DocID022440 Rev 3
1/12
www.st.com
1 page  
STFI24NM60N
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
Test conditions
td(on)
tr(v)
td(off)
tf(i)
Turn-on delay time
Voltage rise time
Turn-off-delay time
Fall time
VDD = 300 V, ID = 8.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 14)
Min. Typ. Max Unit
- 11.5 - ns
- 16.5 - ns
- 73 - ns
- 37 - ns
Symbol
Table 8. Source drain diode
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 17 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A, di/dt = 100 A/µs
VDD= 60 V
(see Figure 16)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 16)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max Unit
- 17 A
- 68 A
- 1.6 V
- 340
ns
- 4.6
µC
- 27
A
- 404
ns
- 5.7
µC
- 28
A
DocID022440 Rev 3
5/12
12
5 Page 
STFI24NM60N
5 Revision history
Revision history
Date
07-Nov-2011
20-Mar-2012
24-Jul-2014
Table 10. Document revision history
Revision
Changes
1 First release.
– Document status promoted from preliminary data to production
data.
2 – Package name has been updated.
– Minor text changes.
– Modified: the entire typical values in Table 6
3
– Minor text changes
DocID022440 Rev 3
11/12
12
11 Page | ||
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