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PDF IRFF220 Data sheet ( Hoja de datos )
| Número de pieza | IRFF220 | |
| Descripción | HEXFET TRANSISTORS | |
| Fabricantes | International Rectifier | |
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Hay una vista previa y un enlace de descarga de IRFF220 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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PD - 90427D
IRFF220
JANTX2N6790
REPETITIVE AVALANCHE AND dv/dt RATED
JANTXV2N6790
HEXFET®TRANSISTORS
REF:MIL-PRF-19500/555
THRU-HOLE (TO-205AF)
200V, N-CHANNEL
Product Summary
Part Number BVDSS RDS(on)
IRFF220
200V 0.80Ω
ID
3.5A
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this
latest “State of the Art” design achieves: very low on-
state resistance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of parelleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high energy pulse circuits.
T0-39
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
3.5
2.25
14
20
0.16
Units
A
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
±20
0.242
2.2
2.0
5.0
-55 to 150
300 (0.063 in. (1.6mm) from case for 10s)
0.98(typical)
V
mJ
A
mJ
V/ns
°C
g
For footnotes refer to the last page
www.irf.com
1
08/07/07
1 page  
IRFF220, JANTX2N6790, JANTXV2N6790
13 a& b
Fig9. MaximumDrainCurrentVs.
CaseTemperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-V D D
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
www.irf.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRFF220.PDF ] | |
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