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PDF JCS50N20WT Data sheet ( Hoja de datos )
| Número de pieza | JCS50N20WT | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | JILIN SINO-MICROELECTRONICS | |
| Logotipo |  |
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R JCS50N20T
JCS50N20T
主要参数 MAIN CHARACTERISTICS
封装 Package
ID
VDSS
Rdson-max
（@Vgs=10V）
Qg-typ
用途
高频开关电源
电子镇流器
UPS 电源
50A
200 V
50mΩ
90nC
APPLICATIONS
High frequency switch
mode power supplies
Electronic lamp ballasts
based on half bridge
UPS
产品特性
低栅极电荷
低 Crss
开关速度快
产品全部经过雪崩测试
高抗 dv/dt 能力
RoHS 产品
FEATURES
Low gate charge
Low Crss
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product
订货信息 ORDER MESSAGE
订货型号
Order codes
印记
Marking
JCS50N20WT-O-W-N-B JCS50N20WT
JCS50N20ABT-O-AB-N-B JCS50N20ABT
封装
Package
TO-247
TO-3PB
无卤素
Halogen
Free
否 NO
否 NO
包装
Packaging
条管 Tube
条管 Tube
器件重量
Device
Weight
6.1g (typ)
5.14g (typ)
版本：201510D
1/9
1 page  
R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
JCS50N20T
On-Region Characteristics
100
10
VGS
Top 15V
10V
9V
8V
7V
6.5V
6V
5.5V
Bottom 5V
1
0.1
0.01
0.1
Notes:
1. 250μs pulse test
2. TC=25℃
1 10
V D S [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
0.15
Transfer Characteristics
100
10
150℃
25℃
1
Notes:
1.250μs pulse test
2.VDS=40V
0.1
2 4 6 8 10
VGS [V]
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
10
0.10
VGS=10V
0.05
VGS=20V Note:Tj=25℃
0 20 40 60 80 100 120
I D [A]
Capacitance Characteristics
7x103
Ciss=Cgs+Cgd(Cds=shorted)
6x103
Coss=Cds+Cgd
5x103
Crss=Cgd
Ciss
4x103
3x103
2x103
1x103
0
100
Coss
Crss
101
V DS Drain-Source Voltage [V]
25℃
1
150℃
Notes:
1. 250μs pulse test
2. VGS=0V
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VS D [V]
Gate Charge Characteristics
1.1
12
VDS=40V
10
VDS=100V
8
6
VDS=160V
4
2
Notes:
0 ID=50A
0 10 20 30 40 50 60 70 80 90 100
Qg Toltal Gate Charge [nC]
版本：201510D
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet JCS50N20WT.PDF ] | |
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