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PDF MUPTB5e3 Data sheet ( Hoja de datos )
| Número de pieza | MUPTB5e3 | |
| Descripción | Surface Mount Transient Voltage Suppressors | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MUPTB5e3 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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MUPT5e3 – MUPT48e3
and MUPTB5e3 – MUPTB48e3
Available
5V – 48V Powermite1, Surface Mount
Transient Voltage Suppressors
DESCRIPTION
Microsemi’s unique and new Powermite MUPT series of transient voltage suppressors feature
oxide-passivated chips with high-temperature solder bonds for high surge capability and negligible
electrical degradation under repeated surge conditions. Both unidirectional and bidirectional
configurations are available. In addition to its size advantages, the Powermite package includes a
fully metallic bottom (anode) side that eliminates the possibility of solder flux entrapment at
assembly and a unique locking tab design serves as an integral heat sink. Its innovative design
makes this device fully compatible for use with automatic insertion equipment.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
Powermite package with standoff voltages 5 to 48 V.
Both unidirectional and bidirectional polarities:
-Anode to case bottom (MUPT5e3 thru MUPT48e3)
-Bidirectional (MUPTB5e3 thru MUPTB48e3)
Clamping time less than 100 pico-seconds for unidirectional and 5 nano-seconds for bidirectional.
100% surge current testing of all parts.
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B.
Both RoHS and non-RoHS compliant versions available.
APPLICATIONS / BENEFITS
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.
Protection from switching and induced RF transients.
-Integral heat sink / locking tabs
-Fully metallic bottom side eliminates flux entrapment
Compliant to IEC61000-4-2 and IEC61000-4-4 for ESD and EFT protection respectively.
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:
Class 1: MUPT5 /MUPTB8 to 17
Class 2: MUPT5 /MUPTB5 to 12
High-Reliability
Screening available in
reference to
MIL-PRF-19500
Tested in accordance
with the requirements of
AEC-Q101
DO-216AA
Package
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Ambient (1)
Thermal Resistance Junction-to-Case (base tab)
Peak Pulse Power (see Figure 1 and Figure 2)
MUPT5e3 thru MUPT48e3:
MUPTB5e3 thru MUPTB48e3:
Symbol
TJ / TSTG
RӨJA
RӨJC
PPP
Value
-65 to +150
240
15
@ 8/20 µs @10/1000µs
1000
150
1000
150
Unit
oC
oC/W
oC/W
W
Rated Average Power Dissipation
(base tab < 112 oC)
Impulse Repetition Rate (duty factor)
Solder Temperature @ 10 s
PM(AV)
TSP
Notes: 1. When mounted on FR4 PC board with 1 oz copper.
2.5
0.01
260
W
%
oC
Power Discretes & Modules
Business Unit
Discrete Products Group
Microsemi Corporation
PDM – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
PDM – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
RF01103-1, Rev. A (09/01/15)
©2015 Microsemi Corporation
Page 1 of 5
1 page  
MUPT5e3 – MUPT48e3
and MUPTB5e3 – MUPTB48e3
PACKAGE DIMENSIONS
LOCKING TAB
Dimensions
Ltr Inch
Millimeters
Min Max Min Max
A 0.029 0.039 0.73 0.99
B 0.016 0.026 0.40 0.66
C 0.070 0.080 1.77 2.03
D 0.087 0.097 2.21 2.46
E 0.020 0.030 0.50 0.76
F 0.051 0.061 1.29 1.54
G 0.021 0.031 0.53 0.78
H 0.004 0.008 0.10 0.20
I 0.070 0.080 1.77 2.03
J 0.035 0.045 0.89 1.14
PAD LAYOUT
Dimensions
Ltr Inch Millimeters
A 0.100
2.54
B 0.105
2.67
C 0.050
1.27
D 0.030
0.76
E 0.025
0.64
RF01103-1, Rev. A (09/01/15)
©2015 Microsemi Corporation
Page 5 of 5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet MUPTB5e3.PDF ] | |
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