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Número de pieza | PMEG3010ESB | |
Descripción | MEGA Schottky barrier rectifier | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PMEG3010ESB (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! PMEG3010ESB
30 V, 1 A low VF MEGA Schottky barrier rectifier
1 July 2015
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection in a leadless ultra small DSN1006-2 (SOD993)
Surface-Mounted Device (SMD) package.
2. Features and benefits
• Average forward current: IF(AV) ≤ 1 A
• Reverse voltage: VR ≤ 30 V
• Low forward voltage, typical: VF = 495 mV
• Low reverse current, typical: IR = 12 µA
• Package height typ. 270 µm
3. Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch mode power supply
• Low power consumption applications
• Ultra high-speed switching
• LED backlight for mobile application
4. Quick reference data
Table 1.
Symbol
IF(AV)
VR
VF
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
IR reverse current
Conditions
δ = 0.5; f = 20 kHz; Tsp ≤ 140 °C;
square wave
Tj = 25 °C
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
VR = 10 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C
VR = 30 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C
Min Typ Max Unit
- - 1A
- - 30 V
- 495 565 mV
-
1.6 5
µA
- 12 45 µA
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1 page NXP Semiconductors
102
Zth(j-a)
(K/W)
10
duty cycle =
1
0.75
0.5
0.25
0.1
0.05
0.33
0.2
0.02
0 0.01
PMEG3010ESB
30 V, 1 A low VF MEGA Schottky barrier rectifier
aaa-016802
1
10-3
10-2
10-1
Ceramic PCB, Al2O3, standard footprint
1
10 102 103
tp (s)
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG3010ESB
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 July 2015
© NXP Semiconductors N.V. 2015. All rights reserved
5 / 14
5 Page NXP Semiconductors
PMEG3010ESB
30 V, 1 A low VF MEGA Schottky barrier rectifier
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
PMEG3010ESB v.2 20150701
Product data sheet
-
Modification:
• Product status changed
PMEG3010ESB v.1 20150512
Preliminary data sheet -
Supersedes
PMEG3010ESB v.1
-
PMEG3010ESB
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 July 2015
© NXP Semiconductors N.V. 2015. All rights reserved
11 / 14
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PMEG3010ESB | MEGA Schottky barrier rectifier | NXP Semiconductors |
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