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PDF PMEG3010EB Data sheet ( Hoja de datos )
| Número de pieza | PMEG3010EB | |
| Descripción | MEGA Schottky barrier rectifier | |
| Fabricantes | NXP Semiconductors | |
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PMEG3010EB
1 A very low VF MEGA Schottky barrier rectifier
Rev. 2 — 15 March 2012
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD523 ultra small and flat
lead Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
Forward current: IF ≤ 1 A
Reverse voltage: VR ≤ 30 V
Very low forward voltage
AEC-Q101 qualified
Ultra small and flat lead SMD plastic
package
1.3 Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Reverse polarity protection
Low power consumption applications
1.4 Quick reference data
Table 1.
Symbol
IF
VR
VF
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
Conditions
Tsp ≤ 55 °C
IF = 1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ;
Tamb = 25 °C
2. Pinning information
Min Typ Max Unit
- - 1A
- - 30 V
- 610 680 mV
Table 2.
Pin
1
2
Pinning information
Symbol Description
K cathode[1]
A anode
[1] The marking bar indicates the cathode.
Simplified outline
12
SOD523
Graphic symbol
12
sym001
1 page  
NXP Semiconductors
9. Package outline
PMEG3010EB
1 A very low VF MEGA Schottky barrier rectifier
0.85
0.75
1
0.65
0.58
1.65 1.25
1.55 1.15
Dimensions in mm
2
0.34
0.26
Fig 5. Package outline SOD523
10. Soldering
0.17
0.11
02-12-13
2.15
1.1
1.2
0.7
(2×)
0.8
(2×)
Fig 6. Reflow soldering footprint for SOD523
0.5 0.6
(2×) (2×)
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sod523_fr
PMEG3010EB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 15 March 2012
© NXP B.V. 2012. All rights reserved.
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