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PDF PF08107B Data sheet ( Hoja de datos )
| Número de pieza | PF08107B | |
| Descripción | MOS FET Power Amplifier Module | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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PF08107B
MOS FET Power Amplifier Module
for E-GSM and DCS1800 Dual Band Handy Phone
ADE-208-787F (Z)
7th Edition
Feb. 2001
Application
• Dual band amplifier for E-GSM (880 MHz to 915 MHz) and DCS1800 (1710 MHz to 1785 MHz).
• For 3.5 V nominal operation
Features
• 2 in / 2 out dual band amplifier
• Simple external circuit including output matching circuit
• One power control pin with one band switch
• High gain 3stage amplifier : 0 dBm input Typ
• Lead less thin & Small package : 8 × 13.75 × 1.6 mm Typ
• High efficiency : 50 % Typ at 35.0 dBm for E-GSM
43 % Typ at 32.0 dBm for DCS1800
Pin Arrangement
• RF-K-8
8 7G65 G
G 12 G 34
1: Pin GSM
2: Vapc
3: Vdd1
4: Pout GSM
5: Pout DCS
6: Vdd2
7: Vctl
8: Pin DCS
G: GND
1 page  
PF08107B
Electrical Characteristics for DCS1800 mode (Tc = 25°C)
Test conditions unless otherwise noted:
f = 1710 to 1785 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 0 V, Rg = Rl = 50 Ω, Tc = 25°C,
Pulse operation with pulse width 577 µs and duty cycle 1:8 shall be used.
Item
Frequency range
Band select (DCS active)
Input power
Control voltage range
Supply voltage
Total efficiency
2nd harmonic distortion
3rd harmonic distortion
4th~8th harmonic distortion
Input VSWR
Output power (1)
Output power (2)
Symbol
F
Vctl
Pin
Vapc
Vdd
ηT
2nd H.D.
3rd H.D.
4th~8th H.D.
VSWR (in)
Pout (1)
Pout (2)
Min
1710
0
–2
0.2
3.0
37
32.0
30.5
Typ
0
3.5
43
−45
−45
1.5
33
31.5
Max
1785
0.1
2
2.2
4.5
−35
−35
–35
3
Isolation
Switching time
Stability
−42 −37
tr, tf
1
2
No parasitic oscillation
Load VSWR tolerance
No degradation
Noise power
Pnoise
−77
Slope Pout/Vapc
Phase shift
Total conversion gain1
AM output
200
20
−5
40
Unit Test Condition
MHz DCS1800 (1710 to 1785)
V
dBm
V
V
% Pout DCS = 32.0 dBm,
dBc Vapc = controlled
dBc
dBc
dBm Vapc = 2.2 V
dBm Vdd = 3.1 V, Vapc = 2.2 V,
Tc = +70°C
dBm
µs
Vapc = 0.2 V, Pin DCS = 2 dBm
Pout DCS = 0 to 32.0 dBm
Vdd = 3.1 to 4.5 V, Pout DCS ≤ 32.0 dBm,
Vapc ≤ 2.2 V, Rg = 50 Ω,
Output VSWR = 6 : 1 All phases
Vdd = 3.1 to 4.5 V, Pout DCS ≤ 32.0 dBm,
Vapc ≤ 2.2 V, Rg = 50 Ω, t = 20 sec.,
Output VSWR = 10 : 1 All phases
dBm
f0 = 1785 MHz, frx = f0 +20 MHz,
Pout DCS = 32.0 dBm,
RES BW = 100 kHz
dB/V
deg
dB
Pout DCS = 0 to 32.0 dBm
Pout DCS = 30.5 to 31.5 dBm
f0 = 1785 MHz, Pout DCS = 30.5 dBm,
Other sig. = 1765 MHz (−40 dBm)
% Pout DCS = 0 dBm,
4%AM modulation at input
50 kHz modulation frequency
5
5 Page 
Pin vs Pout – Vdd Dependence
880 MHz Pout vs. Pin
40
35
30
25
20
15
Vapc = 2.2 V,
10 Tc = 25°C,
Zg = Zl = 50 Ω
Vdd = 3.5 V
5 Vdd = 3.2 V
Vdd = 3.0 V
0
−20 −15 −10
−5
Pin (dBm)
0
5
915 MHz Pout vs. Pin
40
35
30
25
20
15
Vapc = 2.2 V,
10 Tc = 25°C,
Zg = Zl = 50 Ω
Vdd = 3.5 V
5 Vdd = 3.2 V
Vdd = 3.0 V
0
−20 −15 −10
−5
Pin (dBm)
0
5
10
10
PF08107B
11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet PF08107B.PDF ] | |
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