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PDF PJS6602 Data sheet ( Hoja de datos )
| Número de pieza | PJS6602 | |
| Descripción | Complementary Enhancement Mode MOSFET | |
| Fabricantes | Pan Jit International | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de PJS6602 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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PPJS6602
20V Complementary Enhancement Mode MOSFET
Voltage 20 / -20V Current 5.2 /-3.4A
SOT-23 6L
Features
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
Lead free in compliance with EU RoHS 2011/65/EU
directive
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 6L Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0005 ounces, 0.014 grams
Marking: SC2
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 4)
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal Resistance
- Junction to Ambient (Note 3)
SYMBOL N-Ch LIMIT P-Ch LIMIT
VDS 20
-20
VGS +12
+12
ID 5.2 -3.4
IDM 20.8 -13.6
1.25
PD
10
TJ,TSTG
-55~150
RθJA
100
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
September 18,2015-REV.00
Page 1
1 page  
PPJS6602
N-Channel TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Threshold Voltage Variation with Temperature.
Fig.9 Capacitance vs. Drain-Source Voltage.
September 18,2015-REV.00
Page 5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet PJS6602.PDF ] | |
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