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PDF PJS6415AE Data sheet ( Hoja de datos )

Número de pieza PJS6415AE
Descripción P-Channel Enhancement Mode MOSFET
Fabricantes Pan Jit International　
Logotipo Pan Jit International Logotipo



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No Preview Available ! PJS6415AE Hoja de datos, Descripción, Manual

PPJS6415AE
20V P-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
-20 V Current
-4.9A
SOT-23 6L-1
Features
RDS(ON) , VGS@-10V, [email protected]<60mΩ
RDS(ON) , [email protected], [email protected]<70mΩ
RDS(ON) , [email protected], [email protected]<96mΩ
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc
ESD Protected 2KV HBM
Lead free in comply with EU RoHS 2011/65/EU directives.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 6L-1 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0003 ounces, 0.0084 grams
Marking: S5E
Unit : inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
-20
+12
-4.9
-19.6
2
16
-55~150
62.5
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
April 29,2015-REV.01
Page 1

1 page




PJS6415AE pdf
PPJS6415AE
PART NO PACKING CODE VERSION
Part No Packing Code
PJS6415AE_S1_00001
Package Type
SOT-23 6L-1
Packing type
3K pcs / 7” reel
Marking
S5E
Version
Halogen free
MOUNTING PAD LAYOUT
April 29,2015-REV.01
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