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PDF KMB060N40BA Data sheet ( Hoja de datos )
| Número de pieza | KMB060N40BA | |
| Descripción | N-Channel Trench MOSFET | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
KMB060N40BA
N-Ch Trench MOSFET
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for Back-light Inverter and power
Supply.
FEATURES
VDSS=40V, ID=60A.
Low Drain to Source ON Resistance.
: RDS(ON)=8.5m (Max.) @ VGS=10V
: RDS(ON)=11m (Max.) @ VGS=4.5V
Super High Dense Cell Design.
High Power and Current Handling Capability.
A
F
J
G
C
B
D
E
H
N
O
M
K
L
DIM MILLIMETERS
A 9.95 +_ 0.05
B 9.2+_ 0.1
C 8.00
P D 15.3+_ 0.2
E 4.9 +_0.2
RF
1.5
G 2.54 +_ 0.05
Q H 0.80 +_ 0.05
J 1.27 +_0.10
K 4.50
L 1.30
M 6.90
N 1.75
O 4.40
P
0.1
+_
0.15
0.05
Q 2.4 +_ 0.1
R 2.0 MIN
MAXIMUM RATING (Ta=25 Unless otherwise Noted)
CHARACTERISTIC
SYMBOL N-Ch UNIT
Drain to Source Voltage
Gate to Source Voltage
VDSS
VGSS
40 V
20 V
Drain Current
DC@TC=25
Pulsed
(Note1)
(Note2)
ID
IDP
60
A
100
Drain to Source Diode Forward Current
Single Pulsed Avalanche Energy
(Note3)
IS
EAS
100 A
153 mJ
@TC=25
Drain Power Dissipation
@Ta=25
(Note1)
(Note2)
PD
69
W
3.1
Maximum Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
Thermal Resistance, Junction to Case
(Note1) RthJC
1.8
/W
Thermal Resistance, Junction to Ambient (Note2) RthJA
Note 1) RthJC means that the infinite heat sink is mounted.
Note 2) Surface Mounted on 1 1 Pad of 2 oz copper.
Note 3) L=42.5 H, IAS=60A, VDD=20V, VGS=10V, Starting Tj=25
40
/W
PIN CONNECTION (TOP VIEW)
D
2
2
Marking
D2PAK
KMB
060N40
BA
Type Name
Lot No
2009. 1. 14
13
GS
1
Revision No : 0
3
1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KMB060N40BA.PDF ] | |
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