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PDF MBRT30020R Data sheet ( Hoja de datos )

Número de pieza MBRT30020R
Descripción Silicon Power Schottky Diode
Fabricantes GeneSiC 
Logotipo GeneSiC Logotipo



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No Preview Available ! MBRT30020R Hoja de datos, Descripción, Manual

Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 20 V to 40 V VRRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
MBRT30020 thru MBRT30040R
VRRM = 20 V - 40 V
IF(AV) = 300 A
Three Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBRT30020(R) MBRT30030(R) MBRT30035(R) MBRT30040(R) Unit
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
VRRM
VRMS
VDC
Tj
Tstg
20
14
20
-55 to 150
-55 to 150
30
21
30
-55 to 150
-55 to 150
35
25
35
-55 to 150
-55 to 150
40
28
40
-55 to 150
-55 to 150
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBRT30020(R) MBRT30030(R) MBRT30035(R) MBRT30040(R) Unit
Average forward current (per
pkg)
Peak forward surge current
(per leg)
Maximum instantaneous
forward voltage (per leg)
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
Thermal characteristics
Thermal resistance, junction-
case (per leg)
IF(AV)
TC = 125 °C
IFSM tp = 8.3 ms, half sine
VF IFM = 150 A, Tj = 25 °C
Tj = 25 °C
IR Tj = 100 °C
Tj = 150 °C
RΘJC
300
2000
0.70
1
10
30
0.40
300
2000
0.70
1
10
30
0.40
300
2000
0.70
1
10
30
0.40
300
2000
0.70
1
10
30
0.40
A
A
V
mA
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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